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Infineon IGBT Single Transistor IC 28 A 650 V TO-220 IKP28N65ES5XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKP28N65ES5XKSA1 |
| Series | 5th Generation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC47/20/22 |
| Maximum Continuous Collector Current Ic | 28A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V |
| Maximum Power Dissipation Pd | 130W |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V |
Key Features
- High current density and high efficiency transistor for power applications.
- Supports operating temperatures from -40°C up to 175°C junction temperature.
- Includes anti-parallel diode for enhanced switching performance.
- Features fast switching for both hard and soft switching implementations.
- No need for additional gate clamping components during operation.
- Constructed in a TO-220 package suitable for industrial mounting.
- Designed for circuit complexity reduction and PCB cost optimization.
- Complies with JEDEC standards JEDEC47/20/22 for reliability.
Product Description
Infineon IKP28N65ES5XKSA1 is a 5th generation Insulated Gate Bipolar Transistor (IGBT) single transistor IC with a maximum continuous collector current of 28 A and a collector emitter voltage rating of 650 V. Packaged in a TO-220 form factor, it features an integrated anti-parallel diode for improved device functionality in switching applications.
This transistor is engineered for high performance in industrial, electronic, and power applications, including motor control, inverters, and power supply circuits. It offers high current density and efficiency while enabling faster time-to-market cycles due to design simplicity. The device operates reliably over a wide temperature range from -40°C to 175°C junction temperature, supporting harsh industrial environments.
The transistor supports maximum power dissipation of 130 W and maximum gate emitter voltage of ±20 to ±30 V, with a collector emitter saturation voltage of 1.9 V. Its design eliminates the need for external gate clamping components, simplifying circuit design. This component complies with JEDEC standards JEDEC47/20/22, ensuring quality and reliability for demanding electrical systems.
Applications include industrial control, power electronics, manufacturing equipment, HVAC systems, and energy management solutions requiring robust and efficient power switching components.
High current density ensures efficient power handling. Wide operating temperature range of -40°C to 175°C junction temperature. 5th generation technology for improved switching performance. TO-220 package allows easy mounting and heat dissipation.
Compliance with JEDEC reliability standards JEDEC47/20/22. Integrated anti-parallel diode for enhanced switching applications. Eliminates extra gate protection components thus reducing circuit complexity. Suitable for industrial, electronic component, and power supply manufacturing sectors.
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Frequently Asked Questions
The maximum continuous collector current for this model is 28 A.
It has a maximum collector emitter voltage rating of 650 V.
The transistor operates reliably over a temperature range from -40°C to 175°C.
This model is packaged in a TO-220 form factor, suitable for industrial mounting.
The maximum power dissipation for the IKP28N65ES5XKSA1 is 130 W.
Yes, it includes an integrated anti-parallel diode for enhanced switching performance.
The maximum gate emitter voltage is ±20 to ±30 V.
It complies with JEDEC standards JEDEC47/20/22 for reliability.
The collector emitter saturation voltage for this transistor is 1.9 V.
This transistor is suitable for applications such as motor control, inverters, and power supply circuits.
The IKP28N65ES5XKSA1 is a 5th generation Insulated Gate Bipolar Transistor (IGBT).
It eliminates the need for external gate clamping components, thus reducing circuit complexity.
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