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onsemi Insulated Gate Bipolar Transistor IGBT 650 V 75 A TO-247-3L Surface Mount FGHL75T65MQDT
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.87mm |
| Model | FGHL75T65MQDT |
| Width | 20.82mm |
| Mount Type | Surface |
| Series | FGHL75T65MQDT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247-3L |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Power Dissipation Pd | 375W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Capable of handling a maximum collector-emitter voltage of 650 volts.
- Designed for high power dissipation up to 375 watts.
- Equipped with 3 pins and packaged in TO-247-3L surface mount style.
- Operates safely between -55°C and 175°C temperature range.
- Features low switching and conduction losses for efficient operation.
- Optimized for solar inverters, UPS, EV charging stations, and energy storage systems.
- Provides easy paralleling operation with positive temperature coefficient characteristics.
- Complies with RoHS standards ensuring environmental safety.
Product Description
onsemi FGHL75T65MQDT is an Insulated Gate Bipolar Transistor (IGBT) designed for medium switching speed applications with a maximum collector-emitter voltage rating of 650 V and maximum power dissipation of 375 W. It comes in a TO-247-3L package with surface mount technology and features a 3-pin configuration, suitable for compact and efficient circuit designs.
This transistor operates reliably within a wide temperature range from -55°C to 175°C, making it suitable for demanding industrial environments. Its low switching and conduction losses optimize energy efficiency, which is critical for applications including solar inverters, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, and energy storage systems (ESS).
The device's positive temperature coefficient facilitates easy paralleling, improving performance and system scalability. Manufactured to meet RoHS compliance, it ensures environmental regulations are satisfied. The compact package dimensions of 15.87 mm length, 20.82 mm width, and 4.82 mm height enable integration in space-constrained assemblies.
Capable of handling a maximum collector-emitter voltage of 650 volts. Designed for high power dissipation up to 375 watts. Equipped with 3 pins and packaged in TO-247-3L surface mount style. Operates safely between -55°C and 175°C temperature range.
Features low switching and conduction losses for efficient operation. Optimized for solar inverters, UPS, EV charging stations, and energy storage systems. Provides easy paralleling operation with positive temperature coefficient characteristics.
Complies with RoHS standards ensuring environmental safety. Compact dimensions with length 15.87 mm, width 20.82 mm, and height 4.82 mm. Automotive standard compliance is not applicable for this series. This onsemi FGHL75T65MQDT IGBT is engineered for high-performance power conversion in industrial, renewable energy, and commercial electrical equipment applications.
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Frequently Asked Questions
The maximum collector-emitter voltage rating of this IGBT is 650 volts.
This model is designed for a maximum power dissipation of 375 watts.
It operates safely between -55°C and 175°C.
The IGBT is packaged in a TO-247-3L surface mount style.
This model is equipped with a 3-pin configuration.
The dimensions are 15.87 mm in length, 20.82 mm in width, and 4.82 mm in height.
It is optimized for use in solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and energy storage systems.
Yes, it complies with RoHS standards, ensuring environmental safety.
The positive temperature coefficient facilitates easy paralleling, improving performance and scalability in applications.
The maximum gate-emitter voltage (VGEO) is 20 volts.
The country of origin for this IGBT is India.
This model belongs to the FGHL75T65MQDT series.
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