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Infineon N-Channel IGBT Single Transistor IC 160 A 600 V, 3-Pin TO-247, Through Hole IKQ120N60TXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.1mm |
| Length | 41.2mm |
| Model | IKQ120N60TXKSA1 |
| Width | 15.9mm |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 160A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 833W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Supports maximum continuous collector current of 160 A for high power applications.
- Maximum collector emitter voltage of 600 V ensures durability under high voltage stress.
- Encased in a TO-247 package with 3-pin through hole mount for easy PCB integration.
- Features TrenchStop series technology for enhanced efficiency and reliability.
- Operates within a wide temperature range from -40°C to 175°C for industrial robustness.
- Maximum power dissipation of 833 W supports demanding power loads.
- Maximum gate emitter voltage of 20 V provides safe switching control.
- Collector emitter saturation voltage is low at 1.5 V, improving efficiency.
Product Description
Infineon IKQ120N60TXKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) single transistor IC designed for power applications requiring robust current and voltage handling capability. Rated for a maximum continuous collector current of 160 A and a collector-emitter voltage of 600 V, this device ensures reliable switching performance in industrial-grade equipment.
Packaged in a 3-pin TO-247 through-hole configuration, the IKQ120N60TXKSA1 integrates TrenchStop series technology that enhances system power density while maintaining the same thermal performance. Its extended creepage distance of 4.25 mm and 35% larger active thermal pad area lead to 20% lower thermal resistance, improving device stability and longevity.
The device operates efficiently with a maximum power dissipation of 833 W and supports operating temperatures ranging from -40°C to 175°C, making it suitable for harsh industrial environments and automotive systems. The maximum gate emitter voltage of 20 V and a low saturation voltage of 1.5 V further enable safe and efficient control of power switching.
These features make the Infineon IKQ120N60TXKSA1 ideal for diverse applications such as motor control, power supplies, inverters, and other systems requiring high current and voltage transistor switches.
Maximum continuous collector current of 160 A. Maximum collector emitter voltage of 600 V for voltage resilience. TO-247 package type with 3-pin through hole mount. TrenchStop series technology for superior efficiency. Operating temperature range from -40°C to 175°C.
Maximum power dissipation rated at 833 W. Maximum gate emitter voltage of 20 V. Low collector emitter saturation voltage of 1.5 V. Improved thermal management with bigger active thermal pad and creepage distance. Suitable for industrial, automotive, and manufacturing power electronics.
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Frequently Asked Questions
The maximum continuous collector current of the Infineon IKQ120N60TXKSA1 is 160 A.
This model supports a maximum collector-emitter voltage of 600 V, ensuring durability under high voltage stress.
The IKQ120N60TXKSA1 is packaged in a TO-247 type with a 3-pin through-hole mount, facilitating easy PCB integration.
It operates efficiently within a temperature range of -40°C to 175°C, suitable for harsh industrial environments.
The maximum power dissipation of this transistor is rated at 833 W, supporting demanding power loads.
The maximum gate-emitter voltage for the IKQ120N60TXKSA1 is 20 V, providing safe switching control.
The collector-emitter saturation voltage is low at 1.5 V, which improves efficiency in power applications.
This model features TrenchStop series technology, which enhances efficiency and reliability in power applications.
The dimensions of this IGBT are 41.2 mm in length, 15.9 mm in width, and 5.1 mm in height.
The country of origin for the Infineon IKQ120N60TXKSA1 is India.
This IGBT is suitable for applications such as motor control, power supplies, and inverters, requiring high current and voltage switching.
The IKQ120N60TXKSA1 has an extended creepage distance of 4.25 mm and a 35% larger active thermal pad area, leading to 20% lower thermal resistance compared to standard designs.
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