ROHM Insulated Gate Bipolar Transistor IGBT 40 A 600 V 3-Pin TO-247GE Through Hole RGCL80TS60GC13

ROHM RGCL80TS60GC13 is a high efficiency insulated gate bipolar transistor (IGBT) designed for demanding high voltage and high current industrial applications. Featuring a maximum continuous collector current of 40 amperes and a collector emitter voltage rating of 600 volts, this IGBT is housed in a durable 3-pin TO-247GE package suitable for through hole mounting.

Utilizing field stop trench technology, this transistor achieves a low collector emitter saturation voltage of 1.4 volts, yielding significant energy savings and high switching efficiency. It is designed to operate reliably over a wide temperature range from -40°C to 175°C, making it ideal for robust industrial environments including power conversion, motor drives, and energy management systems.

This device is Pb-free and RoHS compliant, meeting modern environmental standards. The maximum power dissipation is rated at 148 watts, ensuring the device can handle substantial loads with effective thermal management. The device also features a maximum gate emitter voltage of ±30 volts to ensure stable and safe gate control during operation.

The package's 3-pin TO-247GE form factor enables straightforward through hole mounting on printed circuit boards, facilitating ease of integration into various electronic assemblies. The ROHM RGCL80TS60GC13 IGBT is suitable for a broad range of industrial, manufacturing, and power electronics applications requiring efficient switching and high power handling capability.

Maximum continuous collector current of 40 amperes for high performance. Collector emitter voltage rating up to 600 volts suitable for high voltage applications. Power dissipation capacity of 148 watts ensuring efficient operation.

Low collector emitter saturation voltage of 1.4 volts reduces power loss. Wide operating temperature range from -40°C to 175°C for rugged environments. RoHS compliant with Pb-free lead plating ensuring environmental safety.

Designed with field stop trench technology for improved efficiency. Through hole mount type with 3-pin TO-247GE package for easy assembly. Maximum gate emitter voltage of ±30 volts providing operational stability.

This IGBT module is categorized under semiconductor components essential for industrial power electronics and manufacturing applications. Explore more ROHM semiconductor products for diverse industrial electronic needs on EnvMart.

Explore more products in our IGBTs category.