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onsemi N-Channel IGBT-Field Stop II, 80 A 650 V, 3-Pin TO-247, Through Hole NGTB40N65FL2WG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 5.3mm |
| Length | 21.34mm |
| Model | NGTB40N65FL2WG |
| Width | 16.25mm |
| Mount Type | Through Hole |
| Series | Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 366W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum continuous collector current of 80 A ensures robust current handling.
- Collector-emitter voltage rating of 650 V supports high voltage applications.
- Maximum power dissipation of 366 W allows effective thermal management.
- Package type is 3-pin TO-247 with through-hole mount for ease of installation.
- Supports switching speeds up to 1 MHz for fast operation.
- Operating temperature range spans from -55°C minimum to 175°C maximum.
- Maximum gate-emitter voltage is 20 V for reliable gate control.
- Maximum collector-emitter saturation voltage is 2 V, enhancing efficiency.
Product Description
onsemi NGTB40N65FL2WG is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) of Field Stop II series, engineered for demanding electronic and power switching applications. It features an 80 A maximum continuous collector current and 650 V maximum collector-emitter voltage, making it suitable for heavy-duty power electronics.
Encapsulated in a durable 3-pin TO-247 through-hole package, this transistor offers ease of installation and excellent thermal dissipation with a maximum power dissipation rated at 366 W. The device supports switching frequencies up to 1 MHz, providing versatility for rapid switching circuits.
Its operating temperature range from -55°C to 175°C ensures reliable performance across extreme industrial environments. The maximum gate-emitter voltage of 20 V and a collector-emitter saturation voltage of 2 V contribute to efficient and controlled operation.
The device complies with RoHS standards, underscoring its environmental compatibility. Physical dimensions of length 21.34 mm, width 16.25 mm, and height 5.3 mm allow straightforward integration into electronic assemblies.
Maximum continuous collector current of 80 A ensures robust current handling. Collector-emitter voltage rating of 650 V supports high voltage applications. Maximum power dissipation of 366 W allows effective thermal management.
Package type is 3-pin TO-247 with through-hole mount for ease of installation. Supports switching speeds up to 1 MHz for fast operation. Operating temperature range spans from -55°C minimum to 175°C maximum. Maximum gate-emitter voltage is 20 V for reliable gate control.
Maximum collector-emitter saturation voltage is 2 V, enhancing efficiency. Dimensions include length 21.34 mm, width 16.25 mm, and height 5.3 mm. RoHS compliant ensuring environmental safety.
This IGBT is ideal for industrial, power management, motor control, and manufacturing applications requiring efficient switching and high current capacity. Its reliable construction and compact size make it suitable for integration into complex power electronic designs.
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Frequently Asked Questions
The maximum continuous collector current for this model is 80 A, ensuring robust current handling capabilities.
This IGBT has a collector-emitter voltage rating of 650 V, making it suitable for high voltage applications.
The maximum power dissipation for this unit is 366 W, allowing for effective thermal management during operation.
It is packaged in a 3-pin TO-247 configuration, which allows for through-hole mounting and ease of installation.
The operating temperature range for this model spans from -55°C to 175°C, ensuring reliable performance in extreme environments.
The maximum gate-emitter voltage for this IGBT is 20 V, providing reliable gate control.
The maximum collector-emitter saturation voltage for this model is 2 V, which enhances operational efficiency.
It supports switching speeds of up to 1 MHz, making it suitable for fast operation in various applications.
The dimensions of this IGBT are 21.34 mm in length, 16.25 mm in width, and 5.3 mm in height.
Yes, this model complies with RoHS standards, ensuring its environmental compatibility.
This IGBT is ideal for industrial, power management, motor control, and manufacturing applications that require efficient switching and high current capacity.
This model belongs to the Field Stop II series, designed for demanding electronic and power switching applications.
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