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Infineon N-Channel IGBT Single Transistor IC 80 A 600 V 250 W 3-Pin TO-263 Through Hole AIKW50N60CTXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.21mm |
| Length | 42mm |
| Model | AIKW50N60CTXKSA1 |
| Width | 16.13mm |
| Mount Type | Through Hole |
| Series | TRENCHSTOPTM |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 250W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- The device comes in a 3-pin TO-263 package suitable for through-hole mounting.
- Maximum power dissipation rating is 250 W, allowing high load handling capability.
- It supports operation temperatures ranging from -40°C up to 175°C for reliable performance.
- Features TrenchStopTM series technology with low switching losses and high efficiency.
- Device complies with automotive standard AEC-Q101 for enhanced reliability in automotive applications.
- The maximum gate emitter voltage is 20 V ensuring safe gate drive conditions.
- It has a low collector emitter saturation voltage of 1.5 V improving conduction efficiency.
- Mechanical dimensions include length 42 mm, width 16.13 mm, height 5.21 mm.
Product Description
Infineon AIKW50N60CTXKSA1 N-Channel IGBT Single Transistor IC is engineered for high efficiency and reliable power control in a variety of industrial and automotive applications. With a maximum continuous collector current of 80 A and collector emitter voltage rating of 600 V, this transistor supports demanding power switching needs.
The component utilizes Infineon's fieldstop technology within the TrenchStopTM series to reduce switching losses significantly and enhance overall device performance. Its soft fast recovery anti-parallel emitter controlled diode further minimizes electromagnetic interference during operation.
Its through-hole 3-pin TO-263 package provides robustness and ease of mounting in printed circuit boards where durability and heat dissipation are critical. The product's operating temperature range from -40°C to 175°C makes it suitable for harsh environmental conditions encountered in industrial setups and automotive electronics.
The component meets the stringent AEC-Q101 automotive standard, ensuring reliability and endurance in automotive power electronics. The maximum gate emitter voltage of 20 V and a low collector emitter saturation voltage of 1.5 V contribute to efficient gate drive and minimized conduction losses respectively.
The device supports a maximum power dissipation of 250 W, allowing for effective thermal management in power conversion circuitry. Physical dimensions of length 42 mm, width 16.13 mm, and height 5.21 mm facilitate integration in compact power modules.
Designed for industrial, automotive, and power electronics applications requiring stringent reliability and performance. Ideal for motor control, inverter circuits, power supplies, and other switching applications demanding low switching losses and high efficiency.
This transistor is an essential component in advanced semiconductor devices intended for upgrading power electronic systems. Browse our broad selection of IGBT transistors and related components for your industrial and automotive electronic projects on EnvMart.
Explore more products in our IGBTs category.
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Frequently Asked Questions
The maximum continuous collector current for this model is 80 A.
This transistor has a collector emitter voltage rating of 600 V.
The maximum power dissipation rating for this unit is 250 W.
It operates within a temperature range of -40°C to 175°C.
This IGBT comes in a 3-pin TO-263 package suitable for through-hole mounting.
The maximum gate emitter voltage is 20 V, ensuring safe gate drive conditions.
The collector emitter saturation voltage is low at 1.5 V, which improves conduction efficiency.
It complies with the AEC-Q101 automotive standard, enhancing its reliability for automotive applications.
The dimensions are 42 mm in length, 16.13 mm in width, and 5.21 mm in height.
It utilizes TrenchStopTM series technology, which features low switching losses and high efficiency.
This model is designed for industrial and automotive applications, including motor control and inverter circuits.
It features a soft fast recovery anti-parallel emitter controlled diode to minimize electromagnetic interference during operation.
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