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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKN06N60RC2ATMA1 |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-SOT223 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Maximum Continuous Collector Current Ic | 6A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Maximum Power Dissipation Pd | 7.2W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Infineon IKN06N60RC2ATMA1 reverse conducting drive is a high-quality IGBT discrete device housed in a PG-SOT223 package, engineered to deliver reliable performance in industrial and electronic applications. Its maximum continuous collector current of 6 A and collector emitter voltage rating of 600 V make it suitable for power management tasks in a wide range of devices.
The device supports a maximum power dissipation of 7.2 W, enabling efficient thermal handling in compact electronic circuits. Its maximum gate emitter voltage of 20 V allows for precise gate control, optimizing switching speed and reducing power losses.
With a collector emitter saturation voltage of 2.3 V, the drive offers improved switching characteristics that enhance overall device efficiency. The operating temperature range from -40°C to 150°C accommodates use in challenging industrial environments.
Compliant with RoHS standards, the IKN06N60RC2ATMA1 supports safer environmental practices by limiting hazardous substances. However, this model is not qualified for automotive standard applications.
The monolithically integrated diode enhances performance, controllability, and reliability compared to older RC-DF models. Maximum continuous collector current of 6 A ensures efficient device operation. Collector emitter voltage up to 600 V supports high voltage applications.
Power dissipation limit of 7.2 W offers effective heat management. Compact PG-SOT223 package enables versatile mounting options. Maximum gate emitter voltage of 20 V facilitates stable gate driving. Collector emitter saturation voltage rated at 2.3 V improves switching performance.
Wide temperature range from -40°C to 150°C ensures durability in varied conditions. RoHS compliant for environmentally responsible usage. Not suitable for automotive standard applications. Monolithically integrated diode improves overall device reliability and performance.
This reverse conducting drive is ideal for industrial, electronic components, power management, switching circuits, and semiconductor applications requiring robust and reliable performance. Explore more products in our IGBT category to find devices tailored for your specific power electronics needs.
Explore more products in our IGBTs category.
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