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ROHM Type N-Channel IGBT 50 A 650 V, 3-Pin TO-247N Through Hole RGW00TS65HRC11

Category IGBTs Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Model RGW00TS65HRC11
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-247N
Minimum Operating Temperature -40°C
Pin Count 3
Maximum Continuous Collector Current Ic 50A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Power Dissipation Pd 254W
Maximum Gate Emitter Voltage VGEO ±30 V

Key Features

  • Maximum continuous collector current of 50 amperes ensures high capacity for demanding applications.
  • Maximum collector emitter voltage rating of 650 volts supports robust voltage handling.
  • High power dissipation of 254 watts allows for efficient thermal management.
  • Packaged in a TO-247N 3-pin through hole design for easy integration into assemblies.
  • Features low collector emitter saturation voltage and low switching losses for energy-efficient operation.
  • Provides high-speed switching performance up to 1 MHz for advanced power control.
  • Operates reliably within a temperature range from -40°C to 175°C for industrial and automotive environments.
  • AEC-Q101 qualified, meeting stringent automotive industry standards for quality and reliability.

Product Description

ROHM RGW00TS65HRC11 is a high-performance Type N-Channel IGBT semiconductor designed to meet demanding industrial and automotive applications. Featuring a robust maximum continuous collector current of 50 A and collector emitter voltage of 650 V, this device is housed in a 3-pin TO-247N package optimized for through-hole mounting, facilitating easy assembly and replacement in power electronic circuits.

The device delivers high power dissipation capacity of 254 W and supports switching speeds up to 1 MHz, enabling high-efficiency operation with low losses and soft switching characteristics. Low collector emitter saturation voltage further contributes to energy savings and thermal efficiency, making this IGBT ideal for power management applications.

Engineered to withstand harsh environments, it operates over a wide temperature range from -40°C to 175°C and is qualified under AEC-Q101 automotive standards, ensuring reliability in vehicle electronics as well as industrial controls.

Its Pb-free lead plating and compliance with RoHS ensure environmental safety and alignment with global regulatory standards. Typical industrial uses include automotive electronics systems, industrial inverter circuits, power factor correction (PFC), DC-DC converters, and on/off board computing modules.

Maximum continuous collector current of 50 A supports high current applications. 650 V collector emitter voltage rating ensures robustness in power systems. TO-247N 3-pin through hole package facilitates easy integration.

AEC-Q101 qualification guarantees automotive-grade quality. Wide operating temperature range from -40°C to 175°C suits various conditions. High-speed switching capability up to 1 MHz improves operational efficiency. Low saturation voltage reduces conduction losses.

Lead plating is Pb-free and RoHS compliant. Applications include automotive, industrial inverters, DC-DC converters, and PFC circuits.

This product is categorized under IGBTs in semiconductor components. Browse our extensive range of semiconductor products for reliable, high-quality components engineered for industrial and electronic applications.

ROHM Type N-Channel IGBT 50 A 650 V, 3-Pin TO-247N Through Hole RGW00TS65HRC11
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is 50 A, making it suitable for high current applications.

This model has a maximum collector emitter voltage rating of 650 V, ensuring robust voltage handling in power systems.

It has a maximum power dissipation capacity of 254 W, allowing for efficient thermal management in various applications.

The device is packaged in a TO-247N 3-pin through hole design, facilitating easy integration into assemblies.

It operates reliably within a temperature range from -40°C to 175°C, suitable for both industrial and automotive environments.

This model is AEC-Q101 qualified, meeting stringent automotive industry standards for quality and reliability.

The maximum gate emitter voltage for this IGBT is ±30 V, which is important for controlling the device's operation.

It supports high-speed switching performance up to 1 MHz, enhancing operational efficiency in power management applications.

The maximum collector emitter saturation voltage is 1.9 V, contributing to reduced conduction losses during operation.

Yes, the lead plating is Pb-free and complies with RoHS, ensuring environmental safety and alignment with global regulatory standards.

Typical applications include automotive electronics systems, industrial inverter circuits, power factor correction (PFC), and DC-DC converters.

This IGBT has a pin count of 3, which is standard for its TO-247N package type.

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