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Infineon AUIRFS Type N-Channel MOSFET, 127 A, 100 V, 3-Pin TO-263 AUIRFS4310ZTRL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AUIRFS4310ZTRL |
| Mount Type | Surface |
| Series | AUIRFS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 127A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 127 A ensures high power handling.
- Maximum drain-source voltage is rated at 100 V for robust operation.
- Surface mount TO-263 package with 3 pins allows compact integration.
- Low maximum drain source resistance of 3 mΩ reduces conduction losses.
- Typical gate charge of 80 nC supports fast switching performance.
- Maximum power dissipation of 81 W enables efficient heat handling.
- Wide operating temperature range from -55°C to 175°C.
- Maximum gate-source voltage of 20 V supports reliable gate control.
Product Description
Infineon AUIRFS4310ZTRL is a Type N-channel HEXFET Power MOSFET designed for industrial and automotive applications. It provides a maximum continuous drain current of 127 A and supports voltages up to 100 V, housed in a compact 3-pin TO-263 surface mount package.
This MOSFET utilizes advanced process technology to deliver ultra-low on-resistance, enhancing efficiency and reducing heat generation during operation. It can operate reliably within a temperature range spanning from -55°C to 175°C, making it suitable for demanding environments.
The device features a maximum power dissipation capacity of 81 W, enabling it to manage significant power loads without degradation. The low typical gate charge of 80 nC facilitates fast switching speeds which are critical in power management and conversion systems.
Additional specifications include a maximum gate-source voltage of ±20 V and a forward voltage drop of 1.3 V, optimizing its performance in switching and amplification circuits.
Its automotive AEC-Q101 qualification ensures high reliability under automotive standards, suitable for industrial power management, motor control, power supplies, and other semiconductor discrete applications.
Maximum continuous drain current of 127 A. Maximum drain-source voltage of 100 V. 3-pin TO-263 surface mount package. Low on-resistance and high power dissipation. Wide operating temperature range from -55°C to 175°C. Fast switching enabled by low gate charge.
Forward voltage rating of 1.3 V. Meets RoHS and automotive AEC-Q101 standards.
Suitable for industrial, automotive, and power electronics applications requiring efficient power switching and management. Explore more in the Semiconductor MOSFET category at EnvMart for advanced components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 127 A, allowing for high power handling capabilities.
It has a maximum drain-source voltage rating of 100 V, ensuring robust operation in various applications.
This model is housed in a compact 3-pin TO-263 surface mount package, facilitating easy integration into circuits.
The typical gate charge is 80 nC, which supports fast switching performance essential for power management.
The maximum power dissipation capacity is 81 W, enabling efficient heat handling during operation.
It operates reliably within a temperature range from -55°C to 175°C, making it suitable for demanding environments.
It meets the AEC-Q101 automotive standard, ensuring high reliability for automotive applications.
The maximum gate-source voltage is ±20 V, which supports reliable gate control in various applications.
The forward voltage rating for this model is 1.3 V, optimizing its performance in switching and amplification circuits.
It features a maximum drain-source resistance of 3 mΩ, which helps reduce conduction losses during operation.
The country of origin for this model is India, indicating its manufacturing location.
This model is suitable for industrial power management, motor control, power supplies, and other semiconductor discrete applications.
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