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Infineon N-Channel MOSFET Power Transistor 381 A 40 V 8-Pin SuperSO8 Package BSC050N10NS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC050N10NS5ATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Offers a maximum continuous drain current of 381 A for high power performance.
- Operates at a maximum drain-source voltage of 40 V ensuring robust switching.
- Equipped with a low on-resistance of 0.7 mΩ to minimize power loss.
- Compact surface mount 8-pin SuperSO8 package measuring 5 x 6 mm for efficient PCB integration.
- Typical gate charge of 80 nC enabling fast switching capabilities.
- Maximum power dissipation rating of 81 W ensures thermal reliability.
- Wide operating temperature range from -55°C to 175°C accommodates harsh environments.
- Forward voltage drop of 1 V offering efficient conduction.
Product Description
Infineon BSC050N10NS5ATMA1 is a power MOSFET utilizing advanced OptiMOS 5 technology designed for demanding power management applications. This N-Channel MOSFET supports a high continuous drain current of 381 A and a maximum drain-source voltage of 40 V, making it suitable for high-efficiency power conversion in industrial and consumer electronics.
The device features a low on-resistance of only 0.7 mΩ, which reduces conduction losses and improves thermal performance. Its 8-pin SuperSO8 package (5 x 6 mm) enables easy surface mounting and compact circuit board design. The typical gate charge of 80 nC supports fast switching speeds essential for modern power supply designs.
With a maximum power dissipation of 81 W and an operating temperature range from -55°C to 175°C, this MOSFET is reliable under extreme conditions. It also has a maximum gate-source voltage rating of 20 V and a forward voltage drop of 1 V, optimizing overall efficiency.
The product is RoHS compliant with Pb-free lead plating, ensuring environmental and regulatory compliance. It is optimized for use in high-performance switched-mode power supplies (SMPS), automotive electronics not requiring automotive standards, and industrial power control systems.
Supports continuous drain current of 381 A for high power efficiency. Operates at 40 V maximum drain-source voltage. Low drain-source resistance of 0.7 mΩ minimizes power loss. Compact 8-pin SuperSO8 surface mount package (5 x 6 mm).
Typical gate charge of 80 nC for rapid switching. Power dissipation ability of 81 W for robust thermal management. Wide operating temperature range (-55°C to 175°C). Forward voltage of 1 V for conduction efficiency. RoHS compliant and Pb-free.
Ideal for high-performance SMPS and industrial power electronics.
Infineon BSC050N10NS5ATMA1 offers a technological advantage in power management semiconductor components, designed for a variety of industrial, laboratory, and commercial applications requiring efficient power control.
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Frequently Asked Questions
It supports a maximum continuous drain current of 381 A, making it suitable for high power applications.
The maximum drain-source voltage is 40 V, ensuring robust switching performance.
It features a low on-resistance of 0.7 mΩ, which helps to minimize power loss during operation.
The typical gate charge is 80 nC, allowing for fast switching capabilities in power management applications.
It comes in a compact 8-pin SuperSO8 package, measuring 5 x 6 mm, which facilitates efficient PCB integration.
The maximum power dissipation rating is 81 W, ensuring thermal reliability during operation.
It operates within a wide temperature range from -55°C to 175°C, accommodating harsh environments.
The forward voltage drop is 1 V, which contributes to efficient conduction.
It is RoHS compliant with Pb-free lead plating, ensuring adherence to environmental regulations.
The maximum gate-source voltage rating is 20 V, which is critical for proper operation.
It is optimized for high-performance switched-mode power supplies (SMPS) and industrial power control systems.
This model features an N-channel configuration, suitable for various power management applications.
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