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Infineon OptiMOS N-Channel MOSFET 540mA 55V Enhancement Mode 3-Pin SOT-23 BSS670S2LH6327XTSA1

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Infineon OptiMOS N-Channel MOSFET 540mA 55V Enhancement Mode 3-Pin SOT-23 BSS670S2LH6327XTSA1

Name: Infineon OptiMOS N-Channel MOSFET 540mA 55V Enhancement Mode 3-Pin SOT-23 BSS670S2LH6327XTSA1
Brand: Infineon
SKU: 133793
Price: 0.08 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1mm
Length	2.9mm
Model	BSS670S2LH6327XTSA1
Width	1.3mm
Mount Type	Surface
Series	OptiMOS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	540mA
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	825mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	360mW
Typical Gate Charge Qg @ Vgs	1.7nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	800mV
N-Channel MOSFET Transistor, 540 mA, 55 V, 3-Pin SOT-23 Infineon BSS670S2LBrand	Infineon

Key Features

55 V drain source voltage allows operation in medium voltage circuits.
Low on-resistance of 825 mΩ minimizes conduction losses.
Continuous drain current rating of 540 mA supports moderate loads.
Typical gate charge of 1.7 nC enables efficient high-speed switching.
Power dissipation rating of 360 mW suits modest thermal environments.
Wide operating temperature range from -55 °C to 150 °C.
Complies with AEC-Q101 automotive standard for reliable automotive applications.
Compact 3-pin SOT-23 package optimized for surface mount technology.

Product Description

Infineon BSS670S2LH6327XTSA1 is an OptiMOS series N-Channel MOSFET designed to deliver reliable switching performance in compact electronic systems. With a maximum drain source voltage of 55 V and continuous drain current capacity of 540 mA, this enhancement mode transistor operates efficiently in a variety of DC switching applications.

The device features a low maximum on-resistance of 825 mΩ, reducing conduction losses and enhancing energy efficiency. Its typical gate charge of 1.7 nC enables fast switching speeds when driven correctly. The power dissipation capability of 360 mW fits modest thermal budgets typically found in compact circuits.

Packaged in a small 3-pin SOT-23 surface mount format, its dimensions of 2.9 mm length, 1.3 mm width, and 1 mm height allow for compact PCB layouts. The MOSFET supports an extended temperature range from -55 °C to 150 °C and meets the AEC-Q101 qualification, making it suitable for automotive sensor interfaces, battery management auxiliary circuits, and low-power gate driver applications.

This MOSFET is ideal for industrial, automotive, laboratory electronic modules, and commercial compact power switching. Its robust electrical characteristics ensure stable operation in demanding environments requiring moderate voltage and current switching.

55 V maximum drain source voltage allows higher voltage switching circuits. 825 mΩ low RDS(on) reduces conduction losses in low current paths. 540 mA continuous drain current supports steady-state load operations. 1.7 nC typical gate charge for efficient high-speed switching performance.

360 mW power dissipation supports modest thermal management. Wide temperature operating range from -55 °C to 150 °C. AEC-Q101 compliant for automotive electronic applications. Compact 3-pin SOT-23 surface mount package for space-efficient PCB design.

Applications include automotive sensor interface switching, DC load switching, and low-power converters. Explore our extensive range of semiconductor products on EnvMart for reliable and efficient electronic component sourcing.