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Infineon OptiMOS Type N-Channel MOSFET, 80 A, 60 V, Enhancement Mode, 3-Pin TO-220 IPP057N06N3GXKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPP057N06N3GXKSA1
Mount Type Through Hole
Series OptiMOS
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 80A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 5.7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 115W
Typical Gate Charge Qg @ Vgs 82nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Maximum continuous drain current of 80 amperes for robust load handling.
  • Drain-source voltage rated up to 60 volts, suitable for medium voltage applications.
  • Low on-resistance of 5.7 milliohms ensures minimal power loss.
  • Enhanced mode channel operation ideal for precise switching performance.
  • 3-pin TO-220 through-hole package facilitates easy PCB mounting.
  • Maximum power dissipation up to 115 watts supports high power applications.
  • Wide operating temperature range from -55°C to 175°C for reliability in harsh environments.
  • Maximum gate-source voltage of 20 volts for stable gate operation.

Product Description

Infineon IPP057N06N3GXKSA1 OptiMOS Type N-Channel MOSFET is engineered for industrial and commercial synchronous rectification and switching applications requiring efficient power management. This 80 A, 60 V Enhancement Mode MOSFET in a 3-Pin TO-220 package is tailored for uses in switched mode power supplies such as servers, desktops, and tablet chargers.

Its low on-resistance of 5.7 mΩ and optimized gate charge product make it ideal for fast switching scenarios, including motor control, solar micro inverters, and DC-DC converters requiring rapid switching cycles. Featuring a maximum power dissipation of 115 W and a broad operating temperature range (-55°C to 175°C), the device ensures stable operation under demanding environmental conditions.

The device supports through-hole mounting with a 3-pin configuration for secure PCB integration. It offers a maximum gate-source voltage of 20 V, typical forward voltage of 1.2 V, and a typical gate charge of 82 nC, optimizing power efficiency and switching speed.

Designed to be RoHS compliant and halogen-free, this MOSFET aligns with modern environmental standards. Its MSL1 rating underlines reliability and long-term durability in industrial environments.

Maximum continuous drain current of 80 A. Drain-source voltage rating of 60 V. Package type: 3-pin TO-220, through-hole mount. Low on-resistance (5.7 mΩ) for minimal conduction losses. Enhanced mode operation for precise switching.

Maximum power dissipation of 115 W. Operating temperature range from -55°C to 175°C. Typical gate charge of 82 nC for efficient switching. RoHS compliant and halogen-free. MSL1 rated for high reliability.

This MOSFET is suited for industrial power electronics, including motor control systems, solar power inverters, fast switching DC-DC converters, and power supply modules. Its robust design and high performance make it an essential component for engineers optimizing power efficiency and thermal management.

Explore similar MOSFETs and power semiconductor solutions at EnvMart for your industrial and laboratory needs.

Infineon OptiMOS Type N-Channel MOSFET, 80 A, 60 V, Enhancement Mode, 3-Pin TO-220 IPP057N06N3GXKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 80 amperes.

This MOSFET has a maximum drain-source voltage rating of 60 volts.

It features a low on-resistance of 5.7 milliohms, ensuring minimal power loss during operation.

The maximum power dissipation for this MOSFET is 115 watts.

It operates within a temperature range of -55°C to 175°C, making it suitable for harsh environments.

This model comes in a 3-pin TO-220 package, designed for through-hole mounting.

The typical gate charge for this device is 82 nanocoulombs (nC).

The maximum gate-source voltage for this MOSFET is 20 volts.

It is suitable for industrial power electronics, including motor control systems, solar power inverters, and DC-DC converters.

This device features an enhancement mode N-channel configuration.

Yes, it is RoHS compliant and halogen-free, aligning with modern environmental standards.

The typical forward voltage for this model is 1.2 volts.

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