Infineon ISC Type N-Channel MOSFET 63A 40V 8-Pin TDSON-8 FL ISC058N04NM5ATMA1

Infineon ISC058N04NM5ATMA1 is a high-performance Type N-Channel MOSFET designed for power semiconductor applications. With a maximum continuous drain current of 63A and a drain-source voltage rating of 40V, this device delivers reliable switching and conduction performance suitable for battery-powered devices, LV motor drives, and other power electronics.

The MOSFET is housed in a compact 8-pin TDSON-8 FL package with dimensions of 3.8mm length, 4.4mm height, and 1.1mm width, facilitating integration into densely packed PCBs. It supports a maximum power dissipation of 42W, enabling it to handle significant power loads efficiently while maintaining thermal robustness.

Equipped with a maximum gate-source voltage of 20V and a typical gate charge of 16nC at Vgs, it reduces switching losses and improves overall system efficiency. The device operates reliably over a wide temperature range from -55°C to 175°C. Its low on-resistance of 5.8mΩ minimizes conduction losses, enhancing battery life in portable applications.

Infineon's OptiMOS 5 technology incorporated in this MOSFET provides a benchmark solution with higher threshold voltage for immunity against unwanted turn-on and robustness in noisy electrical environments. The device's Pb-free lead plating and RoHS compliance make it suitable for environmentally conscious manufacturing processes.

This MOSFET offers superior thermal resistance for long-term reliability. Reduced gate charge characteristics contribute to lower switching losses at high frequencies. The product is fully avalanche tested to ensure robustness under transient conditions.

Surface mount design permits automated assembly enhancing manufacturing efficiency.