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Vishay N-Channel Enhancement MOSFET 66 A 40 V SO-8 Surface Mount 4-Pin SQJ150EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.1mm |
| Length | 5mm |
| Model | SQJ150EP-T1_GE3 |
| Width | 6.25mm |
| Mount Type | Surface |
| Series | SQJ150EP |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 66A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 6.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 65W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Supports a maximum drain current of 66 amperes for high power handling.
- Can operate with a maximum drain-source voltage of 40 volts.
- Features a SO-8 surface mount package with 4 pins for ease of PCB integration.
- Low on-resistance of 6.8 milliohms reduces power loss during operation.
- Designed for automotive use and qualified to AEC-Q101 standards ensuring reliability.
- Maximum power dissipation rating of 65 watts supports demanding electronic loads.
- Wide operating temperature range from -55°C to 175°C suits harsh environments.
- Typical gate charge of 15 nanocoulombs at specified gate-source voltage for efficient switching.
Product Description
Vishay SQJ150EP-T1_GE3 is an automotive-grade N-Channel MOSFET designed with an enhancement mode channel and housed in a PowerPAK SO-8L surface mount package. This MOSFET supports a maximum continuous drain current of 66 A and a drain-source voltage rating of 40 V, making it suitable for a wide range of power electronic applications.
Qualified to AEC-Q101 standards, this device is rigorously tested for automotive reliability at temperatures ranging from -55°C to 175°C. Its low on-resistance of 6.8 milliohms ensures efficient conduction with minimal power loss, while a power dissipation capability of 65 W allows operation under demanding conditions.
The SQJ150EP-T1_GE3 MOSFET features a typical gate charge of 15 nC at the rated gate-source voltage, optimizing switching performance and efficiency in circuits. The device has a maximal gate-source voltage of 20 V, a forward voltage of 1.1 V, and a compact footprint (5 mm by 6.25 mm by 1.1 mm height) suitable for high-density PCB designs.
This MOSFET is commonly used in automotive electronics, power management modules, industrial motor drives, and high-performance DC-DC converters. It is ideal for applications requiring robust thermal performance and reliable operation under high current conditions.
Supports a maximum drain current of 66 amperes for high power handling. Can operate with a maximum drain-source voltage of 40 volts. Features a SO-8 surface mount package with 4 pins for ease of PCB integration. Low on-resistance of 6.8 milliohms reduces power loss during operation.
Designed for automotive use and qualified to AEC-Q101 standards ensuring reliability. Maximum power dissipation rating of 65 watts supports demanding electronic loads. Wide operating temperature range from -55°C to 175°C suits harsh environments.
Typical gate charge of 15 nanocoulombs at specified gate-source voltage for efficient switching. Maximum gate-source voltage rating of 20 volts ensures device safety. Compact dimensions: length 5 mm, width 6.25 mm, height 1.1 mm optimize space savings.
Ensure to explore further components under MOSFET and semiconductor categories at EnvMart for complementary electronic parts and solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 66 amperes.
It can operate with a maximum drain-source voltage of 40 volts.
This unit features a SO-8 surface mount package with 4 pins for ease of PCB integration.
The low on-resistance is 6.8 milliohms, which helps reduce power loss during operation.
The maximum power dissipation rating is 65 watts, supporting demanding electronic loads.
It has a wide operating temperature range from -55°C to 175°C, making it suitable for harsh environments.
The typical gate charge is 15 nanocoulombs at the rated gate-source voltage.
The maximum gate-source voltage rating is 20 volts, ensuring device safety.
The dimensions are 5 mm in length, 6.25 mm in width, and 1.1 mm in height.
It is qualified to AEC-Q101 standards, ensuring reliability for automotive applications.
This model features an N-channel enhancement mode.
It is commonly used in automotive electronics, power management modules, industrial motor drives, and high-performance DC-DC converters.
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