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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.21mm |
| Length | 16.13mm |
| Model | IPW65R045C7FKSA1 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | CoolMOS C7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 227W |
| Typical Gate Charge Qg @ Vgs | 93nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 0.9V |
Infineon IPW65R045C7FKSA1 is a CoolMOS C7 series N-channel MOSFET designed for high efficiency and robust power electronics applications. It supports a maximum continuous drain current of 46 amperes and a maximum drain-source voltage of 700 volts, making it suitable for a variety of power switching and conversion tasks.
This MOSFET comes in a TO-247 package with through-hole mount, featuring 3 pins ideal for industrial PCB layouts and easy integration. The device operates in enhancement mode and offers a maximum power dissipation capability of 227 watts, enabling it to handle substantial thermal loads effectively.
The IPW65R045C7FKSA1 has a typical gate charge of 93 nanocoulombs at the specified gate voltage, which allows for efficient switching transitions. It has a low forward voltage drop of 0.9 volts, minimizing power losses during conduction phases. The device's operating temperature range from -55°C to 150°C ensures reliability in diverse environmental conditions common in industrial and commercial electronics.
Its physical dimensions of 16.13 mm length, 21.1 mm width, and 5.21 mm height provide a compact form factor for space-constrained designs. While it does not carry automotive standard certifications, it is well-suited for industrial power electronics, power supplies, motor drivers, and other demanding applications that require a high-performance MOSFET.
Maximum continuous drain current of 46 A ensures robust current handling. Drain source voltage rating up to 700 V for high voltage operations. Packaged in TO-247 with 3 pins suitable for through-hole mounting. Enhancement mode channel for efficient switching performance.
Maximum power dissipation of 227 W enables high thermal handling. Gate charge typical value of 93 nC at specified gate voltage. Operating temperature range from -55°C to 150°C supports industrial environments. Low forward voltage of 0.9 V reduces conduction losses.
Compact dimensions for versatile PCB design integration. Ideal for industrial and power electronics applications such as switching power supplies and motor controls. Explore the broad range of Infineon semiconductor products and related power components available on EnvMart for your industrial and laboratory requirements.
Explore more products in our Power MOSFET category.
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