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DiodesZetex N-Channel MOSFET, 40 V, 12.2 A, Enhancement Mode, 3-Pin TO-252 Package DMN4036LK3-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 2.39mm
Length 6.73mm
Model DMN4036LK3-13
Width 6.22mm
Mount Type Surface
Series DMN
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 12.2A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 61mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 8.49W
Typical Gate Charge Qg @ Vgs 9.2nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.96V

Key Features

  • Enhancement mode channel type ensuring efficient switching.
  • Maximum power dissipation of 8.49 W allowing robust operation.
  • Low maximum drain source resistance of 61 mΩ for minimal losses.
  • Typical gate charge of 9.2 nC for fast switching response.
  • Wide operating temperature range from -55°C to 150°C supporting harsh environments.
  • Complies with automotive standard AEC-Q101 for automotive reliability.
  • Compact dimensions with length 6.73 mm, width 6.22 mm, and height 2.39 mm.
  • Maximum gate source voltage of 20 V for safe gate drive.

Product Description

DiodesZetex DMN4036LK3-13 is a high-performance N-Channel MOSFET designed for power management applications requiring a maximum drain source voltage of 40 V and continuous drain current of 12.2 A. This enhancement mode transistor is packaged in a compact 3-pin TO-252 surface mount package, providing efficient heat dissipation with a maximum power dissipation rating of 8.49 W.

The device features a low maximum drain source resistance of 61 mΩ, resulting in minimal power loss and improved efficiency. A typical gate charge of 9.2 nC enables fast switching speeds, ideal for switching regulators, motor drives, and automotive applications compliant with AEC-Q101 automotive standards.

Operating reliably across a wide temperature range from -55°C to 150°C, this MOSFET suits industrial, automotive, and power supply environments. It supports a maximum gate source voltage of 20 V and has a forward voltage of 0.96 V, balancing conduction losses with robust switching characteristics.

With compact physical dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height, it fits well in tight spaces for high-density circuit designs. The device's surface mount design simplifies PCB assembly and enhances mechanical stability.

Enhancement mode N-Channel MOSFET with 40 V maximum drain source voltage. 12.2 A maximum continuous drain current for demanding load conditions. Low on-resistance of 61 mΩ to reduce conduction losses. Fast switching with typical gate charge of 9.2 nC.

Wide operating temperature range from -55°C to 150°C. Compliance with automotive standard AEC-Q101 ensures automotive-grade reliability. Compact TO-252 3-pin package suitable for space-constrained designs. Maximum power dissipation of 8.49 W supports robust thermal management.

This MOSFET is broadly applicable in power supply circuits, motor drivers, automotive electronics, and industrial control systems. The device's reliable operation under high current and temperature stress makes it suitable for demanding environments.

Explore other semiconductor products and MOSFETs at EnvMart for improved electronic component selection and efficient power management solutions.

DiodesZetex N-Channel MOSFET, 40 V, 12.2 A, Enhancement Mode, 3-Pin TO-252 Package DMN4036LK3-13
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Frequently Asked Questions

The maximum drain source voltage of this MOSFET is 40 V.

It has a maximum continuous drain current rating of 12.2 A.

This model is packaged in a TO-252 surface mount package.

The maximum power dissipation is rated at 8.49 W.

The typical gate charge is 9.2 nC, allowing for fast switching response.

It operates reliably across a temperature range from -55°C to 150°C.

The maximum gate source voltage is 20 V.

The maximum drain source resistance is 61 mΩ, which helps minimize power loss.

This model complies with the automotive standard AEC-Q101, ensuring automotive-grade reliability.

The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.

It utilizes an enhancement mode N-channel type.

This MOSFET is suitable for power supply circuits, motor drivers, and automotive electronics.

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