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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | DMN4036LK3-13 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 12.2A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 61mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.49W |
| Typical Gate Charge Qg @ Vgs | 9.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.96V |
DiodesZetex DMN4036LK3-13 is a high-performance N-Channel MOSFET designed for power management applications requiring a maximum drain source voltage of 40 V and continuous drain current of 12.2 A. This enhancement mode transistor is packaged in a compact 3-pin TO-252 surface mount package, providing efficient heat dissipation with a maximum power dissipation rating of 8.49 W.
The device features a low maximum drain source resistance of 61 mΩ, resulting in minimal power loss and improved efficiency. A typical gate charge of 9.2 nC enables fast switching speeds, ideal for switching regulators, motor drives, and automotive applications compliant with AEC-Q101 automotive standards.
Operating reliably across a wide temperature range from -55°C to 150°C, this MOSFET suits industrial, automotive, and power supply environments. It supports a maximum gate source voltage of 20 V and has a forward voltage of 0.96 V, balancing conduction losses with robust switching characteristics.
With compact physical dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height, it fits well in tight spaces for high-density circuit designs. The device's surface mount design simplifies PCB assembly and enhances mechanical stability.
Enhancement mode N-Channel MOSFET with 40 V maximum drain source voltage. 12.2 A maximum continuous drain current for demanding load conditions. Low on-resistance of 61 mΩ to reduce conduction losses. Fast switching with typical gate charge of 9.2 nC.
Wide operating temperature range from -55°C to 150°C. Compliance with automotive standard AEC-Q101 ensures automotive-grade reliability. Compact TO-252 3-pin package suitable for space-constrained designs. Maximum power dissipation of 8.49 W supports robust thermal management.
This MOSFET is broadly applicable in power supply circuits, motor drivers, automotive electronics, and industrial control systems. The device's reliable operation under high current and temperature stress makes it suitable for demanding environments.
Explore other semiconductor products and MOSFETs at EnvMart for improved electronic component selection and efficient power management solutions.
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