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DiodesZetex NPN Small Signal Transistor, 100 mA, 65 V, 3-Pin SOT-23 Package BC846A-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC846A-7-F
Width 2.5mm
Mount Type Surface
Series BC846A
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz

Key Features

  • Maximum DC collector current of 100 mA supports low power applications.
  • Collector emitter voltage rating is 65 V ensuring reliable operation up to this voltage.
  • Compact SOT-23 surface mount package with 3 pins saves PCB space.
  • AEC-Q101 automotive standard qualified providing high reliability in automotive electronics.
  • Typical current gain (hFE) of 110 ensures effective signal amplification.
  • Wide operating temperature range from -65°C up to 150°C allows use in harsh environments.
  • Maximum power dissipation rating of 300 mW suits small signal applications.
  • High transition frequency of 300 MHz for good high-frequency performance.

Product Description

The DiodesZetex BC846A-7-F is a single NPN bipolar transistor in a compact 3-pin SOT-23 surface mount package. It is engineered to operate efficiently in low power amplification and switching circuits found in industrial, automotive, communication, and electronic control applications.

This transistor supports a maximum DC collector current of 100 mA and a collector-emitter voltage (Vceo) rating of up to 65 V. With a minimum DC current gain (hFE) of 110, it provides excellent signal amplification across a wide bandwidth with a transition frequency reaching 300 MHz. The device dissipates up to 300 mW power which makes it suitable for low power designs.

The compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height enable dense circuit board layouts. It meets the AEC-Q101 standard making it highly reliable in automotive and industrial electronic environments. The transistor is designed to operate over a broad temperature range from -65°C to 150°C, ensuring dependable performance under extreme conditions.

Key features include its NPN transistor polarity, single transistor configuration, surface mount package style, and three pins for connection. The maximum collector-base voltage (VCBO) of 80 V and emitter-base voltage (VEBO) of 6 V enhance circuit protection. It is made in China, maintaining international manufacturing quality standards.

This transistor is ideal for engineers and electronics developers requiring high-quality, reliable bipolar transistors for switching and amplification in semiconductor and electronic component assemblies.

Maximum DC collector current of 100 mA supports low power applications. Collector emitter voltage rating is 65 V ensuring reliable operation up to this voltage. Compact SOT-23 surface mount package with 3 pins saves PCB space.

AEC-Q101 automotive standard qualified providing high reliability in automotive electronics. Typical current gain (hFE) of 110 ensures effective signal amplification. Wide operating temperature range from -65°C up to 150°C allows use in harsh environments.

Maximum power dissipation rating of 300 mW suits small signal applications. High transition frequency of 300 MHz for good high-frequency performance. Pin count of 3 facilitates simple circuit integration. Manufactured in China with consistent quality and performance.

Explore our extensive selection of semiconductor components and Bipolar Transistors on EnvMart for all your electronic design and manufacturing needs.

DiodesZetex NPN Small Signal Transistor, 100 mA, 65 V, 3-Pin SOT-23 Package BC846A-7-F
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, making it suitable for low power applications.

The collector-emitter voltage rating (Vceo) is 65 V, ensuring reliable operation up to this voltage.

This transistor has a typical current gain (hFE) of 110, which facilitates effective signal amplification.

The maximum power dissipation rating for this unit is 300 mW, suitable for small signal applications.

It operates over a wide temperature range from -65°C to 150°C, allowing use in harsh environments.

This model uses a compact SOT-23 surface mount package with 3 pins, which saves PCB space.

The maximum collector-base voltage (VCBO) is 80 V and the maximum emitter-base voltage (VEBO) is 6 V, providing circuit protection.

Yes, it meets the AEC-Q101 automotive standard, ensuring high reliability in automotive electronics.

The transition frequency for this transistor is 300 MHz, allowing for good high-frequency performance.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height, enabling dense circuit board layouts.

It is a single NPN transistor configuration, designed for low power amplification and switching circuits.

This model is manufactured in China, adhering to international quality standards.

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