Nexperia N-Channel Enhancement MOSFET 360mA, 60V, 3-Pin SOT-23 2N7002P,215

Nexperia 2N7002P,215 is a type N-channel enhancement MOSFET designed for efficient switching applications with a maximum continuous drain current of 360 mA and a maximum drain source voltage of 60 V.

This MOSFET is housed in a compact 3-pin SOT-23 surface mount package, making it ideal for space-constrained electronic circuits and power management systems.

It dissipates up to 420 mW of power safely and exhibits a low maximum drain source resistance of 1.6 ohms, assisting in minimizing power losses and heat generation under typical operating conditions.

The device operates over an industrial temperature range from -55°C to 150°C, ensuring reliability in harsh environmental conditions common in industrial and commercial electronic equipment.

Typical gate charge of 0.6 nC guarantees fast switching performance, making it suitable for power conversion, load switching, and signal amplification in electronic designs. The maximum allowable gate-source voltage of 20 V provides robust tolerance to voltage spikes, enhancing circuit protection and longevity.

This transistor’s forward voltage is about 1 V, contributing to efficient energy usage within the circuit. Its precise dimensions (3 mm length, 1.4 mm width, 1 mm height) enable easy integration onto printed circuit boards with surface mount technology.

Applications include Industrial electronics, Consumer electronics, Power management, Telecommunications, and Automotive systems where compact, reliable MOSFETs are required. The device supports surface mount technology with a compact SOT-23 package.

It operates safely up to a maximum power dissipation of 420 mW. Featuring low maximum drain source resistance of 1.6 ohms ensures efficient current flow. Designed for operation in temperatures ranging from -55°C to 150°C.

Offers a typical gate charge of 0.6 nC at gate-source voltage. The maximum gate-source voltage is rated at 20 V to guarantee robust gate control. Forward voltage drop across device is approximately 1 V at rated conditions.

Dimensions are compact with length 3 mm, width 1.4 mm, and height 1 mm for easy PCB integration. Explore more electronic semiconductor components and MOSFETs at EnvMart for your circuit design and manufacturing needs.