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Infineon HEXFET Type N-Channel MOSFET, 150 A, 30 V Enhancement, 3-Pin TO-220 IRLB8743PBF

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Infineon HEXFET Type N-Channel MOSFET, 150 A, 30 V Enhancement, 3-Pin TO-220 IRLB8743PBF

Name: Infineon HEXFET Type N-Channel MOSFET, 150 A, 30 V Enhancement, 3-Pin TO-220 IRLB8743PBF
Brand: Infineon
SKU: 103581
Price: 1.22 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	9.02mm
Length	10.67mm
Model	IRLB8743PBF
Width	4.83mm
Mount Type	Through Hole
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	150A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	3mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	140W
Typical Gate Charge Qg @ Vgs	36nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

This N-Channel enhancement mode MOSFET utilizes HEXFET technology for low on-resistance.
It supports a maximum continuous drain current of 150 amps.
The device has a maximum drain-source voltage of 30 volts.
Comes in a TO-220 package with through-hole mount and 3 pins.
Typical gate charge at Vgs is 36 nanocoulombs facilitating efficient switching.
Maximum power dissipation rating is 140 watts for robust thermal handling.
Operates in a temperature range from -55°C to 175°C for versatility.
Maximum gate-source voltage is ±20 volts ensuring gate protection.

Product Description

Infineon IRLB8743PBF HEXFET Type N-Channel MOSFET is a discrete semiconductor device designed for efficient power management in a variety of industrial and electronic applications. This TO-220 package MOSFET offers a maximum continuous drain current of 150 A and a maximum drain-source voltage of 30 V, making it suitable for high current switching tasks and power control circuits.

The HEXFET technology featured in this device ensures low conduction losses and superior efficiency by providing a low drain-source resistance (3 mΩ). Its enhancement mode operation allows reliable switching with a typical gate charge of 36 nC at Vgs, which contributes to minimal switching losses and better energy efficiency.

The MOSFET supports a wide temperature operating range from -55°C up to 175°C, making it reliable in harsh environments including industrial automation, power supplies, motor drives, and automotive electronics. With a maximum power dissipation of 140 W, it can sustain moderate thermal loads effectively.

This component is mounted through-hole using the TO-220 package format with 3 pins for easy integration and robust mechanical stability. The maximum gate-source voltage of 20 V protects the gate from voltage spikes or surges during operation.

Physical dimensions include a length of 10.67 mm, height of 9.02 mm, and width of 4.83 mm. The device has no special certifications or automotive standards but is engineered for standard industrial use.

This MOSFET ensures high current handling with low resistance conduction. Compact TO-220 package aids in thermal management and PCB mounting. Versatile temperature tolerance suits industrial and automotive environments. Low gate charge improves switching efficiency and lowers power consumption.

Ideal for power electronics, motor control, and switching power supplies.

Ideal for engineers and designers seeking a high-performance, reliable MOSFET for demanding electrical applications. Explore similar MOSFETs and semiconductor components in the Electronics category at EnvMart.