onsemi PowerTrench Type N-Channel MOSFET MOSFET 80 A 60 V Enhancement Mode 3-Pin TO-220 FDP5800

onsemi FDP5800 PowerTrench Type N-Channel MOSFET is a high-performance semiconductor device engineered for robust power management and switching applications. It supports a continuous drain current of 80 amperes and a maximum drain-source voltage of 60 volts, making it ideal for use in industrial, power electronics, automotive, and consumer electronics systems. The enhancement mode MOSFET configuration ensures efficient gate control, and the PowerTrench series technology improves device reliability and thermal performance.

This device is supplied in a TO-220 package with 3 pins designed for through-hole mounting, allowing easy integration into printed circuit boards and power modules. The device features a low maximum drain-source resistance of 7.2 milliohms which reduces conduction losses and enhances energy efficiency in power circuits.

The FDP5800 offers excellent thermal capabilities, with a maximum power dissipation rating of 242 watts and a maximum operating temperature up to 175°C. The device operates reliably from a low temperature of -55°C, ensuring performance stability in harsh environments. It has a typical gate charge of 112 nanocoulombs at a gate-source voltage of 10 volts, supporting fast switching speeds necessary in modern power electronics.

Its compact physical dimensions of height 15.7 mm, length 9.9 mm, and width 4.5 mm enable space-efficient designs. The maximum gate-source voltage rating of 20 volts protects the gate oxide during operation. A forward voltage of 1.25 volts contributes to the overall efficiency of the device by minimizing voltage drops.

The FDP5800 is manufactured in China and is designed to meet demanding electronic component standards without automotive certification, tailored for high power discrete semiconductor applications. This MOSFET is suitable for use in industrial power supply units, motor drives, power converters, and other applications requiring efficient high current switching with reliable thermal management.

High current capability of 80 amperes suitable for demanding electronic circuits. Maximum drain-source voltage rating of 60 volts ensures reliable operation under voltage stress. Low drain-source resistance reduces conduction losses.

TO-220 package for convenient through-hole mounting. Efficient power dissipation up to 242 watts supports high-power designs. Fast switching supported by typical 112 nanocoulombs gate charge. Wide operating temperature range from -55°C to 175°C.

Maximum gate-source voltage of 20 volts protects device integrity. Compact dimensions optimize circuit board space. Forward voltage of 1.25 volts enhances conduction efficiency. Explore more onsemi semiconductor components and MOSFETs in the Electronics & Electricals category on EnvMart for reliable industrial and commercial power solutions.