Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, Enhancement Mode, 3-Pin TO-220 IRLZ34NPBF

Infineon IRLZ34NPBF HEXFET N-Channel MOSFET is a high-quality discrete semiconductor device engineered to deliver efficient electrical switching performance in demanding industrial and commercial electronic applications. It features a maximum continuous drain current of 30 amperes and a maximum drain-source voltage of 55 volts, making it suitable for robust power electronic circuits.

The device operates in enhancement mode with a low on-resistance of 35 milliohms, minimizing conduction losses and improving energy efficiency. Its maximum power dissipation capability of 68 watts supports sustained high-power operation without thermal stress, complemented by an operating temperature range from -55°C to +175°C, which ensures stability in harsh environments.

The typical gate charge of 25 nanocoulombs at 5 volts allows rapid switching, enhancing performance in high-frequency applications such as telecommunications and motor control. The device’s package is a standard 3-pin TO-220, designed for through-hole mounting and efficient heat dissipation on printed circuit boards.

Key features include the ±16V maximum gate-source voltage tolerance for safe operation and a forward voltage of 1.3 volts. This MOSFET is extensively used in DC-DC converters for power conversion efficiency, motor driver circuits for industrial automation, power management systems for renewable energy sources, and high-speed switching applications.

With its HEXFET series design, the IRLZ34NPBF assures reliable and high-quality performance essential for a broad range of industrial, laboratory, construction, HVAC, manufacturing, water treatment, agricultural, and commercial electronics sectors.

Low on-resistance of 35 milliohms reduces conduction power losses. Supports maximum power dissipation of 68 watts for durable performance. Wide temperature range operation from -55°C to 175°C for environmental robustness.

Typical gate charge of 25 nanocoulombs enhances switching speed and efficiency. Compact TO-220 3-pin package facilitates ease of mounting and heat management. Maximum gate-source voltage ±16 volts ensures safe circuit tolerance.

Optimized for power conversion, motor control, and renewable energy systems. Enhancement mode channel type provides reliable and efficient switching. Explore more MOSFETs and semiconductor components in our Electronics & Electricals category at EnvMart for specialized industrial and electronics applications.