onsemi PowerTrench N-Channel Power MOSFET, 92 A, 30 V Enhancement Mode, 3-Pin TO-220AB FDP8896

onsemi FDP8896 PowerTrench N-Channel Power MOSFET is engineered for efficient high-current switching in electronic circuits, featuring a maximum continuous drain current of 92 A and a drain-source voltage rating of 30 V.

This enhancement mode MOSFET comes housed in a robust 3-pin TO-220AB package designed for through-hole mounting, facilitating reliable installation in industrial and commercial electronic applications.

The device offers an exceptionally low maximum drain-source resistance of 5.9 milliohms, ensuring minimal conduction losses and improved thermal performance with a maximum power dissipation of 80 W.

Designed to operate within a broad temperature range from -55°C to 175°C, it guarantees performance stability under harsh conditions typically found in manufacturing, industrial controls, and power management systems.

With a typical gate charge of 48 nC at 4 V, the FDP8896 enables fast and efficient switching capabilities, ideal for power conversion and motor control usages. The maximum gate-source voltage rating of ±20 V ensures device protection against voltage spikes, while the forward voltage of 1.25 V improves energy efficiency during operation.

Compact device dimensions measuring 10.67 mm in length, 4.83 mm in width, and 9.4 mm in height keep the footprint minimal while maintaining necessary electrical isolation and heat dissipation standards.

The product complies with RoHS standards, confirming its environmental safety and suitability for modern electronics manufacturing. This PowerTrench MOSFET is widely applicable in industrial, automotive (non-automotive standard), semiconductor power switching, and energy management applications.

Continuous drain current capacity of 92 A for demanding applications. Maximum drain-source voltage of 30 V with enhancement mode operation. Durable TO-220AB 3-pin package ensuring ease of mounting. Low on-resistance of 5.9 milliohms for minimal power loss.

Capable of dissipating up to 80 W power under normal conditions. Wide operating temperature range from -55°C up to 175°C. Typical gate charge of 48 nC enabling fast switching. Maximum gate-source voltage limited to ±20 V for protection.

Forward voltage drop of 1.25 V enhancing switching accuracy. Compact dimensions with length 10.67 mm, width 4.83 mm, and height 9.4 mm. Explore the onsemi FDP8896 PowerTrench MOSFET and related semiconductor products within EnvMart's Electronics and Electricals category for enhanced power switching solutions.