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Microchip VP2450 Type P-Channel MOSFET, 160 mA, 500 V Enhancement Mode, 3-Pin SOT-89 VP2450N8-G
Specifications
| Country of Origin | United States |
|---|---|
| Brand | Microchip |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | VP2450N8-G |
| Width | 2.6mm |
| Mount Type | Surface |
| Series | VP2450 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 160mA |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 35Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.8V |
Key Features
- Operates with low threshold voltage, ensuring normally-off behaviour.
- Supports a maximum continuous drain current of 160 mA and voltage up to 500 V.
- Constructed with vertical DMOS technology providing high thermal stability and low power drive.
- Features a maximum power dissipation of 1.6 W and operates between -55°C and 150°C.
- Includes an integral source-to-drain diode for improved performance.
- Designed for surface-mount applications with compact dimensions of 4.6 mm length, 2.6 mm width, and 1.6 mm height.
- Offers fast switching speeds with low input capacitance and high input impedance.
- Reliable operation with a maximum drain-source resistance of 35 Ω and gate-source voltage limit of 20 V.
Product Description
Microchip VP2450N8-G P-Channel MOSFET is a high-performance, low threshold enhancement-mode transistor designed for switching and amplifying applications in industrial and electronic circuits. This device features a vertical DMOS structure combining the power handling capabilities of bipolar transistors with the high input impedance characteristic of MOS technology. Its construction ensures excellent thermal stability and prevents thermal runaway, making it ideal for demanding environments.
The device supports a maximum continuous drain current of 160 mA and withstands a drain-source voltage of 500 V. It has a maximum power dissipation of 1.6 W and operates reliably within the temperature range of -55°C to 150°C. Its compact 3-pin SOT-89 surface-mount package, measuring 4.6 mm by 2.6 mm by 1.6 mm, facilitates easy integration into printed circuit boards.
The VP2450N8-G features low input capacitance and fast switching speed, making it suitable for efficient power management in electronics, including industrial control systems, power supplies, and consumer electronics. Its integral source-to-drain diode enhances operational flexibility.
Low threshold, normally-off transistor operation. High input impedance and low input capacitance reduce driving power requirements. Integral source-to-drain diode for enhanced device functionality. Compact surface mount SOT-89 package for space-saving design.
Robust thermal performance with maximum operating temperature of 150°C. Suitable for use in industrial, power management, and electronic applications. Manufactured in the United States, ensuring quality and reliability. Explore our range of semiconductors and MOSFET devices for advanced electronic design and manufacturing needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 160 mA.
It can withstand a maximum drain-source voltage of 500 V.
The maximum power dissipation for this MOSFET is 1.6 W.
The dimensions of the SOT-89 package are 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height.
This model operates reliably between -55°C and 150°C.
It is designed for surface-mount applications.
The maximum gate-source voltage limit is 20 V.
It includes an integral source-to-drain diode that improves performance and operational flexibility.
This MOSFET is a P-Channel type.
The maximum drain-source resistance is 35 Ω.
It is suitable for switching and amplifying applications in industrial and electronic circuits.
The VP2450N8-G features low input capacitance, which helps reduce driving power requirements.
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