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Infineon BSP88 Type N-Channel MOSFET 350mA 240V Enhancement Mode SOT-223
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | BSP88 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | BSP88 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 350mA |
| Maximum Drain Source Voltage Vds | 240V |
| Maximum Drain Source Resistance Rds | 6Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 4.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
| MOSFET Channel Type | N-channel |
Key Features
- N-channel MOSFET with enhancement mode operation.
- Supports a maximum continuous drain current of 350mA.
- Rated for up to 240V drain-source voltage, enabling high-voltage switching.
- SOT-223 surface-mount package with 4-pin configuration.
- Maximum power dissipation of 1.8W allows moderate thermal loading.
- Channel resistance of 6Ω facilitates efficient switching in low-current circuits.
- Automotive-grade compliance according to AEC-Q101 standard.
- Typical gate charge of 4.5nC ensures rapid gate transition.
Product Description
Infineon BSP88 BSP88H6327XTSA1 N-Channel MOSFET delivers reliable high-voltage switching performance in compact SOT-223 surface-mount format. This enhancement mode transistor is designed for demanding industrial and automotive environments, offering robust control capabilities and efficient thermal management.
The BSP88 is engineered for moderate current loads, supporting a maximum continuous drain current of 350mA and a drain-source voltage rating of 240V. Its channel resistance of 6Ω helps reduce conduction losses in low-power applications. The device meets the stringent AEC-Q101 automotive standard, ensuring qualification for sensor interface circuits and auxiliary systems.
With a typical gate charge of 4.5nC, the MOSFET enables fast and reliable gate transitions, minimizing switching delays. The maximum power dissipation of 1.8W allows the transistor to accommodate moderate thermal loads, suitable for control stages and battery-management systems. The 20V gate-source voltage limit protects against overstress, and the enhancement-mode channel operation guarantees stable switching behavior.
N-channel MOSFET with 350mA continuous drain current and 240V drain-source voltage. Enhanced surface-mount SOT-223 package with 4-pin configuration for easy PCB integration. 6Ω drain-source resistance for minimized conduction losses.
Fast switching behavior with 4.5nC typical gate charge. Reliable operation across -55°C to 150°C temperature range. Automotive-grade qualification according to AEC-Q101 standard. Ideal for sensor interface circuits, board-level power sequencing, and auxiliary automotive control stages.
This Infineon MOSFET is frequently used for isolated high-voltage control, battery-management modules, and board-level motor driver control. Its compliance with automotive standards and suitability for surface-mount assembly makes it a trusted solution for modern electronic design.
Browse additional Infineon MOSFETs and semiconductors on EnvMart for more performance options in industrial, automotive, and commercial electronic systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 350mA.
It is rated for up to 240V drain-source voltage, making it suitable for high-voltage switching applications.
The BSP88 is packaged in a SOT-223 surface-mount format with a 4-pin configuration.
The channel resistance is 6Ω, which helps reduce conduction losses in low-power applications.
The typical gate charge for the BSP88 is 4.5nC, allowing for rapid gate transitions.
This MOSFET has a maximum power dissipation of 1.8W, suitable for moderate thermal loading.
The operating temperature range for this model is from -55°C to 150°C.
It complies with the AEC-Q101 automotive standard, ensuring suitability for automotive applications.
The maximum gate-source voltage for the BSP88 is 20V, protecting against overstress.
This model is suitable for sensor interface circuits, battery-management modules, and board-level motor driver control.
The dimensions of this model are 6.7mm in length, 3.7mm in width, and 1.8mm in height.
The BSP88 is an N-channel MOSFET with enhancement mode operation.
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