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Infineon StrongIRFET N-Channel MOSFET, 195 A Continuous Drain Current, 60 V Drain Source Voltage, 341 W Power IRFP7530PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP7530PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | StrongIRFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 195A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 341W |
| Typical Gate Charge Qg @ Vgs | 274nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports high power dissipation up to 341W ensuring robust performance.
- Low drain-source resistance of 2 milliohms minimizing power loss.
- Wide operating temperature range from -55°C to 175°C for reliability.
- Enhancement mode channel with a typical gate charge of 274 nC for efficient switching.
- Suitable for use in high current applications such as motor control and power management circuits.
- Standard 3-pin package allows easy integration and replacement.
- Gate-source voltage tolerance from -20V to +20V enhances flexibility.
Product Description
Infineon IRFP7530PBF is a StrongIRFET N-Channel MOSFET designed for efficient power management applications. Featuring a drain current capacity of 195A and a maximum drain-source voltage of 60V, it is encapsulated in a TO-247 package for durable through-hole mounting. The device operates under enhancement mode with a low drain-source resistance of 2 milliohms, significantly reducing power dissipation and improving energy efficiency in demanding circuits.
The MOSFET supports a maximum power dissipation of 341W and can operate reliably within a broad temperature range from -55°C to +175°C, making it suitable for use in harsh industrial, automotive, and power electronics environments. The typical gate charge of 274 nC allows for optimal switching performance, further enhancing the device's efficiency.
This component is ideal for brushed motor drives, battery-powered circuits, half-bridge and full-bridge configurations, synchronous rectifiers, as well as DC/DC and AC/DC converters. The standard three-pin TO-247 package facilitates easy integration into existing circuit designs.
To achieve efficient thermal management, appropriate cooling solutions such as heatsinks or fans should be employed due to the high power dissipation rating. Gate-source voltage tolerance ranges from -20V to +20V, providing flexibility in controlling the device in various circuit topologies.
High continuous drain current of 195A enhances operational performance and current handling. Drain-source voltage rating of 60V supports a variety of power electronics applications. Low on-resistance of 2 milliohms reduces heat generation and power loss.
Wide operating temperature range from -55° to 175°C ensures durability in harsh conditions. TO-247 package for through-hole mount provides mechanical robustness and ease of installation. Enhancement mode operation with efficient gate charge for fast switching.
Recommended for automotive and industrial applications requiring high power and high reliability.
This Infineon StrongIRFET series MOSFET is a reliable choice for designers focusing on advanced power management and motor control systems. Explore more power semiconductors and electronic components within EnvMart's comprehensive catalog for your industrial and commercial projects.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 195A.
It has a maximum drain-source voltage rating of 60V.
The IRFP7530PBF supports a maximum power dissipation of 341W.
This MOSFET operates reliably within a temperature range from -55°C to 175°C.
The typical gate charge for this model is 274 nC.
It comes in a TO-247 package type, suitable for through-hole mounting.
The drain-source resistance is rated at 2 milliohms, minimizing power loss.
It has a gate-source voltage tolerance ranging from -20V to +20V.
This model uses an enhancement mode N-channel configuration.
The dimensions are 20.7mm in height, 15.87mm in length, and 5.31mm in width.
This MOSFET is manufactured in India.
It is suitable for high current applications such as motor control and power management circuits.
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