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ROHM N-Channel MOSFET 4 A 650 V Enhancement Mode 3-Pin TO-252 Surface Mount R6504END3TL1

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ROHM N-Channel MOSFET 4 A 650 V Enhancement Mode 3-Pin TO-252 Surface Mount R6504END3TL1

Name: ROHM N-Channel MOSFET 4 A 650 V Enhancement Mode 3-Pin TO-252 Surface Mount R6504END3TL1
Brand: ROHM
SKU: 219494

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	10.4mm
Length	6.4mm
Model	R6504END3TL1
Width	2.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	4A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	1.05Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	58W
Typical Gate Charge Qg @ Vgs	15nC
Maximum Gate Source Voltage Vgs	20V

Key Features

Maximum continuous drain current of 4 amperes ensuring reliable current handling.
Maximum drain-source voltage rating of 650 volts for high voltage applications.
Low on-resistance of 1.05 ohms enabling efficient power usage.
Typical gate charge of 15 nanocoulombs, facilitating fast switching speeds.
Power dissipation capability up to 58 watts for sustained operation.
Wide operating temperature range from -55°C to 150°C suitable for harsh environments.
Compact dimensions with a length of 6.4 mm, width of 2.4 mm, and height of 10.4 mm.
Surface mount TO-252 package with 3 pins supports easy PCB integration.

Product Description

ROHM R6504END3TL1 is a high-performance N-Channel MOSFET designed for electronic applications requiring efficient power switching and robust thermal characteristics. Featuring a maximum continuous drain current of 4 amperes and a maximum drain-source voltage of 650 volts, this device is suitable for use in power electronics, audio equipment, lighting control, and other industrial applications requiring noise reduction and high switching speeds.

Constructed within a 3-pin TO-252 surface mount package, the MOSFET offers a low on-resistance of 1.05 ohms, which helps minimize power loss during operation. The typical gate charge of 15 nanocoulombs allows for rapid switching, optimizing performance in dynamic circuitry. The device can safely dissipate power up to 58 watts and operate across a wide temperature range from -55°C to 150°C, making it reliable in varied environmental conditions.

This enhancement mode channel MOSFET is Pb-free and complies with RoHS regulations, supporting environmentally sustainable manufacturing. Its compact size with dimensions of 6.4 mm (length), 2.4 mm (width), and 10.4 mm (height) facilitates integration into compact PCB layouts. The device does not conform to specific automotive standards, so it is best suited for general electronic and industrial use cases rather than automotive applications.

Maximum continuous drain current of 4 amperes. 650 volts drain-source maximum voltage rating. Low on-resistance of 1.05 ohms for efficient power conversion. Typical gate charge of 15 nC enabling fast switching speeds. Power dissipation capacity of 58 watts for sustained operation.

Operating temperature range from -55°C to 150°C. Compact 3-pin TO-252 surface mount package. Enhancement mode channel providing precise control. Pb-free and RoHS compliant for environmental responsibility.

This ROHM MOSFET is ideal for industrial, laboratory, and manufacturing applications requiring reliable power switching with low noise interference. It caters to electronic circuit designs in audio equipment, lighting systems, and similar domains. Explore more MOSFETs and semiconductor solutions for your projects at EnvMart to find components that match your technical requirements.