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Infineon CoolMOS P7 Type N-Channel MOSFET, 11A, 800V, Enhancement, 3-Pin TO-220 IPP80R450P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPP80R450P7XKSA1 |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 73W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Delivers maximum continuous drain current of 11A for industrial power systems.
- Supports high drain-source voltage up to 800V, ideal for robust flyback and auxiliary circuits.
- Enhancement mode construction ensures improved switching efficiency and low losses.
- Low RDS(on) of 450mΩ minimizes conduction losses and heat generation.
- 3-pin TO-220 package offers easy through-hole mounting and compact form factor.
- Optimized for applications including adapters, chargers, LED drivers, and SMPS.
- Integrated Zener diode provides ESD protection up to Class 2 (HBM standard).
- Operates reliably within -55°C to 150°C temperature range for versatile environments.
Product Description
Infineon IPP80R450P7XKSA1 CoolMOS P7 Type N-Channel MOSFET is engineered to deliver high performance in power conversion and switching applications. Featuring a maximum continuous drain current of 11A and a high drain-source voltage specification of 800V, this enhancement mode MOSFET is ideal for flyback circuits, adapters, chargers, LED drivers, SMPS, and auxiliary power designs.
The device leverages advanced CoolMOS P7 technology to achieve up to 0.6% efficiency gain and reduce MOSFET temperature by up to 8°C compared to previous generations. With a low RDS(on) of 450mΩ and a typical gate charge Qg at Vgs of 24nC, it supports efficient switching and minimizes energy loss during operation. The integrated Zener diode provides robust ESD protection up to Class 2 (HBM), ensuring long-term reliability in demanding conditions.
Its 3-pin TO-220 package and through-hole mounting allow straightforward installation and compatibility with standard power circuit layouts. The device operates reliably from -55°C up to 150°C, making it suitable for diverse environments and industrial power applications.
Maximum drain current of 11A and 800V drain-source voltage supports high-power designs. Low RDS(on) and efficient switching characteristics enable high power density layouts. ESD protection and rugged package ensure safe operation and longevity.
Applicable for adapter, charger, auxiliary industrial power supplies, LED drivers, and audio SMPS. Maximum power dissipation of 73W accommodates heavy-duty applications. Comprehensive temperature tolerance accommodates rigorous industrial conditions.
This N-channel MOSFET is a versatile solution for designers seeking reliable, efficient, and safe power switching components for both commercial and industrial sectors. Its optimized electrical profile and robust construction deliver best-in-class quality and reliability.
Discover more MOSFETs and power semiconductors from Infineon in the EnvMart electronics category.
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Frequently Asked Questions
The maximum continuous drain current of this model is 11A.
It supports a maximum drain-source voltage of 800V.
The RDS(on) value is 450mΩ, which helps minimize conduction losses.
This MOSFET operates reliably within a temperature range of -55°C to 150°C.
It comes in a 3-pin TO-220 package, allowing for easy through-hole mounting.
This model is optimized for applications such as adapters, chargers, LED drivers, and SMPS.
The typical gate charge Qg at Vgs is 24nC.
The maximum power dissipation for this model is 73W.
Yes, it features an integrated Zener diode that provides ESD protection up to Class 2 (HBM standard).
The channel type of this model is N-channel, which is suitable for enhancement mode operation.
The maximum gate-source voltage (Vgs) is 20V.
The country of origin for this model is India.
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