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Infineon High Current N-Channel Power MOSFET 192 A, 100 V, 245 W, 8-Pin TDSON ISC027N10NM6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.1mm |
| Length | 6.1mm |
| Model | ISC027N10NM6ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 192A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.24mΩ |
| Maximum Power Dissipation Pd | 245W |
| Typical Gate Charge Qg @ Vgs | 91nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports maximum continuous drain current of 192 A for high load operations.
- Maximum drain-source voltage of 100 V for high voltage switching applications.
- Low on-resistance of 2.24 milliohms minimizes conduction losses.
- High power dissipation rating of 245 W enables sustained power handling.
- Typical gate charge of 91 nC balances drive requirements and switching speed.
- Wide gate-source voltage tolerance up to 20 V.
- Operational temperature range from -55 °C to 175 °C for harsh environments.
- Available in compact 8-pin TDSON surface-mount package for board-level assembly.
Product Description
Infineon ISC027N10NM6ATMA1 is a high-current N-Channel Power MOSFET rated at 192 A continuous drain current and 100 V maximum drain-source voltage. It features a maximum power dissipation of 245 W and is housed in an 8-pin TDSON surface-mount package, suitable for compact electronic assemblies.
This device offers low conduction losses with a maximum Rds(on) of 2.24 milliohms, facilitating efficient power conversion in demanding industrial applications. The gate charge of 91 nC provides an optimal balance between driving requirements and switching speed.
Designed for robust operation, it supports a wide temperature range from -55 °C to 175 °C, making it reliable for automotive, motor drive, and power management systems. Its gate-source voltage rating of 20 V gives ample headroom for control circuits.
This MOSFET is ideal for power stages in DC-DC converters, motor drives, battery management, and traction inverter circuits. The 8-pin TDSON package allows for ease of mounting while ensuring thermal and electrical performance.
Supports maximum continuous drain current of 192 A for high load operations. Maximum drain-source voltage of 100 V for high voltage switching applications. Low on-resistance of 2.24 milliohms minimizes conduction losses.
High power dissipation rating of 245 W enables sustained power handling. Typical gate charge of 91 nC balances drive requirements and switching speed. Wide gate-source voltage tolerance up to 20 V. Operational temperature range from -55 °C to 175 °C for harsh environments.
Available in compact 8-pin TDSON surface-mount package for board-level assembly. Forward voltage of 1 V typical during conduction.
Suitable for industrial, automotive, power management, and electronic component manufacturing applications where high current and high efficiency MOSFETs are required. Explore more Infineon semiconductor products at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 192 A, making it suitable for high load operations.
It has a maximum drain-source voltage of 100 V, which is suitable for high voltage switching applications.
The on-resistance is 2.24 milliohms, which minimizes conduction losses during operation.
It has a high power dissipation rating of 245 W, enabling sustained power handling.
The typical gate charge is 91 nC, balancing drive requirements and switching speed effectively.
The operational temperature range is from -55 °C to 175 °C, allowing it to function in harsh environments.
It is available in a compact 8-pin TDSON surface-mount package, suitable for board-level assembly.
The maximum gate-source voltage rating is 20 V, providing ample headroom for control circuits.
The dimensions are 6.1 mm in length, 1.1 mm in width, and 5.1 mm in height.
It is suitable for applications such as DC-DC converters, motor drives, battery management, and traction inverter circuits.
The typical forward voltage during conduction is 1 V.
This model is an N-channel MOSFET, which is commonly used for high-efficiency switching applications.
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