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IXYS HiperFET Polar N-Channel MOSFET, 88A, 300V, Enhancement, TO-247, 3 Pin IXFH88N30P

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IXYS HiperFET Polar N-Channel MOSFET, 88A, 300V, Enhancement, TO-247, 3 Pin IXFH88N30P

Name: IXYS HiperFET Polar N-Channel MOSFET, 88A, 300V, Enhancement, TO-247, 3 Pin IXFH88N30P
Brand: IXYS
SKU: 84791
Price: 17.26 USD
Availability: InStock

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Category MOSFET Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	21.46mm
Length	16.26mm
Model	IXFH88N30P
Width	5.3mm
Mount Type	Through Hole
Series	HiperFET, Polar
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	88A
Maximum Drain Source Voltage Vds	300V
Maximum Drain Source Resistance Rds	40mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	600W
Typical Gate Charge Qg @ Vgs	180nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.5V

Key Features

Features a maximum continuous drain current of 88A for robust power management.
Rated for 300V maximum drain-source voltage, enabling use in demanding circuits.
Enhancement mode device with fast intrinsic diode for efficient switching.
Low 40mΩ maximum drain-source resistance (Rds) minimizes conduction losses.
600W maximum power dissipation supports high-power operation.
Through-hole TO-247 package with 3 pins ensures secure installation.
Gate-source voltage tolerance up to 20V provides flexibility in drive circuit design.
Functional from -55°C up to 150°C for wide operating temperature range.

Product Description

The IXYS IXFH88N30P is a HiperFET Polar series N-channel MOSFET intended for high-power switching applications where reliability and efficiency are critical. This device offers an enhancement mode channel and incorporates a fast intrinsic diode, making it ideal for use in power conversion circuits, motor drives, and industrial systems.

Engineered to deliver a maximum continuous drain current of 88A and withstand a drain-source voltage up to 300V, the IXFH88N30P excels in demanding power supply environments. The low maximum drain-source resistance of 40mΩ ensures minimal losses during operation, supporting high efficiency under heavy loads.

Its TO-247 package, a through-hole configuration with three pins, allows for secure board mounting and optimal thermal dissipation. With a maximum power dissipation capability of 600W, this MOSFET is suited for robust energy transfer and industrial inverter applications. The gate can be driven up to 20V, allowing compatibility with a variety of control ICs and microcontrollers.

Additional technical advantages include a typical gate charge of 180nC at Vgs, a forward voltage of 1.5V, and a wide temperature range from -55°C to 150°C. This makes it suitable for operations in harsh environments such as automotive, industrial, and renewable energy systems.

Compact dimensions of 16.26mm (length), 5.3mm (width), and 21.46mm (height) facilitate integration into tight spaces within electronic assemblies. The device complies with typical industry standards for MOSFET power transistors, offering reliability where it matters most.

Maximum continuous drain current of 88A. Rated for 300V drain-source voltage, ideal for power conversion and drives. Low drain-source resistance for minimum conduction loss. 600W power dissipation capability. Through-hole TO-247 package for secure and flexible mounting.

Gate-source voltage tolerance up to 20V. Wide operational temperature range from -55°C to 150°C. Used in industrial, inverter, motor control, and renewable energy circuits. Browse more MOSFETs and IXYS power solutions at EnvMart for reliable component sourcing across electronics and semiconductor applications.