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DiodesZetex PNP Transistor, -1 A DC Collector Current, -60 V Collector Emitter Voltage, 3-Pin SOT-23 Package DPLS160-7

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.2mm
Length 3mm
Model DPLS160-7
Width 2.5mm
Mount Type Surface
Series DPLS160
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -1A
Transistor Configuration Single
Maximum Transition Frequency ft 220MHz

Key Features

  • Supports maximum collector base voltage of -80 V for reliable switching performance.
  • Surface mount type designed for easy PCB integration.
  • Power dissipation rating of 300 mW suitable for general purpose applications.
  • AC gain (hFE) minimum of 100 ensures efficient amplification.
  • Wide operating temperature range from -55°C to 150°C for harsh conditions.
  • Maximum transition frequency of 220 MHz for high-speed operations.
  • Compact dimensions of 3 mm length, 2.5 mm width, and 1.2 mm height.
  • Automotive compliant with AEC-Q101 standard.

Product Description

DiodesZetex DPLS160-7 is a general purpose PNP Bipolar Junction Transistor (BJT) designed for use in various electronic and industrial applications requiring reliable switching and amplification capabilities. This transistor features a maximum DC collector current of -1 A and a collector emitter voltage rating of -60 V, making it suitable for low to medium power applications. Its compact 3-pin SOT-23 surface mount package facilitates seamless integration into tight PCB layouts common in modern electronics.

The transistor offers a maximum collector base voltage of -80 V and a maximum emitter base voltage of -5 V, supporting robust operation under demanding voltage conditions. With a maximum power dissipation of 300 mW and a minimum DC current gain (hFE) of 100, it ensures efficiency in signal amplification tasks. Additionally, the device supports a high maximum transition frequency of 220 MHz, enabling high-speed signal processing suitable for communication and control circuits.

The operating temperature range extends from -55°C to 150°C, allowing deployment in harsh industrial and automotive environments. Compliance with the AEC-Q101 automotive standard underscores its suitability for automotive electronic systems requiring stringent reliability.

The DPLS160-7 measures 3 mm in length, 2.5 mm in width, and 1.2 mm in height, offering a small form factor ideal for space-constrained designs. This PNP transistor is widely applicable in electronics manufacturing, power management circuits, signal amplification, and automotive control units.

Supports maximum collector base voltage of -80 V for reliable switching performance. Surface mount type designed for easy PCB integration. Power dissipation rating of 300 mW suitable for general purpose applications. AC gain (hFE) minimum of 100 ensures efficient amplification.

Wide operating temperature range from -55°C to 150°C for harsh conditions. Maximum transition frequency of 220 MHz for high-speed operations. Compact dimensions of 3 mm length, 2.5 mm width, and 1.2 mm height. Automotive compliant with AEC-Q101 standard.

Ideal for electronic, industrial, and automotive semiconductor applications requiring reliable Bipolar Transistors. Explore a broad range of transistors and semiconductor components in the Electronics & Electricals category on EnvMart to find the optimal product for your technical requirements.

DiodesZetex PNP Transistor, -1 A DC Collector Current, -60 V Collector Emitter Voltage, 3-Pin SOT-23 Package DPLS160-7
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