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onsemi PowerTrench Type P-Channel MOSFET, 20 V, 1.6 A, Enhancement Mode, 3-Pin SOT-23 Package FDN338P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN338P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 115mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 4.4nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
| P-Channel MOSFET Transistor, 1.3 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02LT1GBrand | ON Semiconductor |
Key Features
- Offers maximum continuous drain current of 1.6 A.
- Features a maximum drain-source resistance of 115 mΩ for efficient conduction.
- Operates with enhancement mode channel at a gate charge of 4.4 nC.
- Can withstand gate-source voltages from -8 V to +8 V.
- Has a maximum power dissipation rating of 500 mW.
- Operates reliably over a temperature range from -55°C to 150°C.
- Compact dimensions with length 2.92 mm, width 1.4 mm, and height 940 μm.
- Soft body diode design reduces need for external snubber circuits.
Product Description
onsemi FDN338P is a PowerTrench® Type P-Channel MOSFET featuring enhancement mode operation with a maximum continuous drain current of 1.6 A and drain-source voltage rating of 20 V. Packaged in a compact 3-Pin SOT-23 surface mount, this device suits compact circuit designs requiring efficient switching.
The device optimizes system power density by combining a small gate charge of 4.4 nC and a low reverse recovery charge with a soft reverse recovery body diode. Its shielded-gate architecture delivers a significantly improved figure of merit (FOM) relative to previous generations.
Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 500 mW, making it suitable for demanding industrial and commercial electronics. The FDN338P MOSFET strongly supports synchronous rectification in AC/DC power supplies by enabling fast switching and reducing overall energy losses.
Compact physical dimensions (2.92 mm length, 1.4 mm width, and 940 μm height) allow for high-density PCB layouts in advanced electronics manufacturing. Maximum continuous drain current: 1.6 A. Maximum drain-source voltage: 20 V.
Package type: SOT-23 surface mount. Gate charge of 4.4 nC improves switching speed. Soft body diode minimizes snubber circuitry. Wide operating temperature range: -55°C to 150°C. Maximum power dissipation: 500 mW. Ideal for industrial, automotive, and consumer electronics applications.
The onsemi FDN338P MOSFET offers a reliable and efficient solution for power management in industrial, commercial, and laboratory electronic equipment. Explore EnvMart for advanced semiconductor devices including MOSFETs suitable for varied power switching and amplification applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.6 A.
This P-Channel MOSFET has a maximum drain-source voltage rating of 20 V.
The dimensions of this unit are 2.92 mm in length, 1.4 mm in width, and 940 μm in height.
It has a typical gate charge of 4.4 nC at the specified gate-source voltage.
The maximum power dissipation rating for this model is 500 mW.
This MOSFET operates reliably over a temperature range from -55°C to 150°C.
It is packaged in a compact 3-Pin SOT-23 surface mount configuration.
The maximum gate-source voltage for this model is from -8 V to +8 V.
The maximum drain-source resistance is 115 mΩ, which aids in efficient conduction.
This model is suitable for industrial, automotive, and consumer electronics applications, particularly in power management.
This device features a Type P channel, operating in enhancement mode.
Yes, it features a soft body diode design that reduces the need for external snubber circuits.
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