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onsemi NDT Type P-Channel MOSFET, 5 A, 30 V Enhancement Mode, 4-Pin SOT-223 NDT452AP
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | NDT452AP |
| Width | 3.56mm |
| Mount Type | Surface |
| Series | NDT |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- High-density DMOS technology ensures low on-state resistance.
- Maximum continuous drain current rating of 5 amperes.
- Maximum drain-source voltage of 30 volts suitable for low voltage applications.
- Compact 4-pin SOT-223 package for surface mounting on PCB.
- Maximum gate-source voltage range from -20 V to +20 V.
- Maximum power dissipation rated at 3 watts for moderate power handling.
- Operating temperature range from -65°C to 150°C for broad environmental tolerance.
- Typical gate charge of 22 nC facilitating fast switching performance.
Product Description
onsemi NDT452AP is a Type P-Channel MOSFET featuring enhancement mode operation optimized using ON Semiconductor’s high cell density DMOS technology. It delivers high saturation current with minimal on-state resistance, ensuring rugged and reliable performance for fast switching tasks.
This transistor comes in a compact 4-pin SOT-223 surface mount package, making it ideal for space-constrained electronic designs. With a maximum continuous drain current of 5 A and a maximum drain-source voltage of 30 V, it suits a range of low voltage power switching applications.
The device supports a wide gate-source voltage range from -20 V to +20 V and dissipates up to 3 W of power. It operates reliably across a temperature span of -65°C to 150°C, accommodating demanding industrial and commercial environments.
Typical applications include load switching, DC/DC converters, battery protection circuits, power management controls, and DC motor control. The high-density cell design and low forward voltage contribute to superior switching efficiency and durability.
Voltage controlled P-Channel small signal switch for stable operation. High-density DMOS technology minimizes on-resistance. Maximum continuous drain current of 5 A and drain-source voltage of 30 V. Compact SOT-223 package ideal for surface mounting.
Wide gate-source voltage tolerance of -20 V to +20 V. Power dissipation up to 3 W supporting moderate power levels. Operating temperature range from -65°C to 150°C for reliability. Typical gate charge 22 nC enables fast switching speeds.
Designed for use in industrial, electronic component, power supply, automotive, and consumer electronics applications, the NDT452AP MOSFET from onsemi provides rugged and reliable switching performance. EnvMart offers a comprehensive range of semiconductor components including MOSFETs for various industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5 amperes.
The maximum drain-source voltage is 30 volts, making it suitable for low voltage applications.
It operates reliably across a temperature range from -65°C to 150°C.
The typical gate charge is 22 nC, which facilitates fast switching performance.
This model comes in a compact 4-pin SOT-223 surface mount package.
The maximum power dissipation for this MOSFET is rated at 3 watts.
The maximum gate-source voltage range is from -20 V to +20 V.
The dimensions are 6.5 mm in length, 3.56 mm in width, and 1.6 mm in height.
Typical applications include load switching, DC/DC converters, battery protection circuits, and power management controls.
This model features a Type P channel with enhancement mode operation.
The forward voltage is -1.2 V.
The maximum drain-source resistance is 65 mΩ.
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