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Vishay EF N-Channel Power MOSFET, 20 A Continuous Drain Current, 800 V Drain Source Voltage, 3-Pin TO-220AB SIHP24N80AEF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHP24N80AEF-GE3 |
| Mount Type | Through Hole |
| Series | EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 0.195Ω |
| Maximum Power Dissipation Pd | 208W |
| Typical Gate Charge Qg @ Vgs | 90nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device features a low on-resistance of 0.195 ohms for reduced conduction loss.
- Supports a maximum power dissipation of 208 watts enabling high power operation.
- Typical gate charge is 90 nC ensuring predictable switching performance.
- The MOSFET operates reliably in temperatures ranging from -55°C to 150°C.
- Maximum gate-source voltage rating of 30 V protects the device integrity.
- Designed for through-hole mounting with easy heatsink attachment.
- Ideal for applications such as high-voltage DC-DC converters and motor drive circuits.
- Conduction forward voltage of 1.2 V impacts switching loss calculations.
Product Description
Vishay SIHP24N80AEF-GE3 is an EF series N-channel power MOSFET designed for industrial power electronics requiring robust switching at high voltages and currents. It supports a maximum continuous drain current of 20 A and a drain source voltage of 800 V, enabling use in demanding power applications.
Housed in a TO-220AB package with 3 pins, it is intended for through-hole mountings that facilitate efficient heatsinking and chassis integration. This device delivers a low maximum on-resistance (Rds) of 0.195 ohms, which reduces conduction losses during operation.
The MOSFET boasts a maximum power dissipation rating of 208 W, suitable for high power industrial and converter applications. Typical gate charge is 90 nC, allowing predictable switching dynamics, while the gate-source voltage maximum is rated at 30 V to protect the gate region.
Its operating temperature range from -55°C to 150°C accommodates wide ambient conditions, making it suitable for harsh environments encountered in laboratory test rigs, industrial inverter switching, motor drive front-end circuits, and power supply primary switching.
The typical forward voltage of 1.2 V during body-diode conduction influences system efficiency and switching loss calculations, important in high-frequency designs. While it meets RoHS standards, this MOSFET is not designed to comply with automotive-specific requirements and should be used accordingly.
Low on-resistance reduces power loss improving efficiency. Wide thermal operating range supports diverse industrial environments. High drain-source voltage rating facilitates high-voltage applications. Through-hole mounting eases mechanical integration and heat dissipation.
Suitable for DC-DC converters, inverters, motor control, and test equipment. Explore more Power MOSFETs and electronics components at EnvMart for reliable industrial and laboratory solutions.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 20 A.
This model supports a maximum drain-source voltage of 800 V.
It is housed in a TO-220AB package type, designed for through-hole mounting.
The maximum power dissipation rating is 208 W, suitable for high power applications.
The typical gate charge is 90 nC, which allows for predictable switching performance.
The maximum gate-source voltage rating is 30 V, which protects the device's integrity.
It operates reliably in temperatures ranging from -55°C to 150°C.
The maximum on-resistance is 0.195 ohms, which helps reduce conduction losses.
It is suitable for applications such as high-voltage DC-DC converters and motor drive circuits.
This model has a pin count of 3.
Yes, it meets RoHS standards, indicating compliance with environmental regulations.
The forward voltage during body-diode conduction is 1.2 V, which impacts switching loss calculations.
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