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onsemi P-Channel MOSFET 11.4 A 30 V Enhancement Mode 8-Pin SOIC NTMS4177PR2G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | NTMS4177PR2G |
| Width | 4mm |
| Mount Type | Surface |
| Series | NTMS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11.4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 19mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 29nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1V |
Key Features
- This MOSFET features a maximum continuous drain current of 11.4 amps.
- Maximum drain-source voltage rating is 30 volts ensuring suitability for medium voltage applications.
- The device comes in a compact 8-pin SOIC surface mount package.
- It supports an enhancement mode channel and has a low drain-source resistance of 19 milliohms for energy-efficient switching.
- Gate charge is low at 29 nanocoulombs, facilitating fast switching speeds.
- Operating temperature range spans from -55°C to 150°C for high reliability in harsh environments.
- The MOSFET has a maximum power dissipation of 2.5 watts for thermal management considerations.
- It is designed without automotive certifications and conforms to no specific standards.
Product Description
onsemi NTMS4177PR2G is a P-Channel Power MOSFET featuring a maximum continuous drain current of 11.4 A and a drain-source voltage rating of 30 V. Packaged in an 8-pin SOIC surface mount, it provides an enhancement mode channel with efficient switching performance.
This device exhibits a low maximum drain-source resistance of 19 milliohms and a typical gate charge of 29 nC, enabling reduced power losses and fast switching operation. It is suitable for various industrial and commercial electronic applications requiring reliable power management.
The maximum power dissipation is 2.5 W, allowing effective thermal design in circuits. Its wide operating temperature range from -55°C to 150°C makes it suitable for harsh environments, industrial controls, power supplies, and other semiconductor applications.
The package dimensions are compact with a length of 5 mm, width of 4 mm, and height of 1.5 mm, facilitating PCB space savings in modern designs. The maximum gate-source voltage tolerance of -20 to +20 V safeguards device reliability under voltage stress.
Maximum continuous drain current: 11.4 A enables handling moderate power loads. Drain-source voltage rating of 30 V supports medium voltage applications. Low Rds(on) of 19 mΩ reduces conduction losses. Compact 8-pin SOIC package eases surface mount assembly.
Wide temperature range (-55°C to 150°C) ensures durability. Maximum power dissipation of 2.5 W fits many compact electronic systems. Typical gate charge of 29 nC facilitates efficient switching. Enhancement channel design for controlled operation.
Ideal for use in industrial power control, switching circuits, and electronic component assembly requiring reliable P-Channel MOSFET performance. Browse more Power MOSFETs and semiconductor components at EnvMart for your industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 11.4 A.
The drain-source voltage rating is 30 V, making it suitable for medium voltage applications.
This model comes in an 8-pin SOIC surface mount package.
The low maximum drain-source resistance is 19 milliohms, which helps reduce conduction losses.
The typical gate charge is 29 nanocoulombs, facilitating efficient switching.
The maximum power dissipation is 2.5 watts, allowing for effective thermal design in circuits.
The maximum gate-source voltage tolerance is -20 to +20 V, which safeguards device reliability under voltage stress.
The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
This MOSFET features an enhancement mode channel type.
It is suitable for various industrial and commercial electronic applications requiring reliable power management.
The country of origin for this product is India.
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