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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.2mm |
| Length | 4.35mm |
| Model | V10P10-M3/86A |
| Width | 6.15mm |
| Mount Type | Surface |
| Series | V10 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-277 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 10A |
| Peak Reverse Repetitive Voltage Vrrm | 100V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 150μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 180A |
| Maximum Forward Voltage Vf | 620mV |
Vishay V10P10-M3/86A is a surface mount Schottky diode in a TO-277 package designed for applications requiring high efficiency and reliable rectification up to 100 V and 10 A. This diode features Vishay's patented Trench MOS Barrier Schottky (TMBS) technology, which reduces minority carrier injection to the drift region, minimizing stored charge and improving switching speeds compared to planar Schottky devices.
The diode supports a maximum continuous forward current of 10 A and a peak non-repetitive forward surge current of 180 A. It offers a low maximum forward voltage of 620 mV and a peak reverse current of 150 μA, which helps reduce power loss and heat generation in power supply circuits.
The device can operate in extreme conditions with a minimum operating temperature of -40°C and a maximum operating temperature of 150°C, making it suitable for industrial and automotive applications requiring robust temperature tolerances. It complies with the automotive industry standard AEC-Q101, ensuring reliability in automotive electronic systems.
The physical dimensions include a length of 4.35 mm, width of 6.15 mm, and a height of 1.2 mm, fitted with 3 pins for secure surface mounting on printed circuit boards. Its compact package allows integration into dense electronic assemblies.
Typical use cases for the Vishay V10P10-M3/86A include AC/DC switched-mode power supplies, DC/DC converters, automotive electronics, industrial power management, and other manufacturing and commercial electronics requiring high power density and low voltage losses.
This diode is manufactured in China and is new, ready for integration into various electronics manufacturing and repair workflows. The patented trench structure technology ensures superior performance in demanding electrical environments.
Features patented Trench MOS Barrier Schottky structure for improved efficiency. High power density with low forward voltage drop. Rated for 10 A continuous forward current and 100 V reverse voltage. Wide operating temperature range with automotive AEC-Q101 compliance.
Compact TO-277 package with three pins for surface mounting. Low reverse leakage current minimizing power loss. Peak surge current up to 180 A for transient conditions. Dimensions: 4.35 mm length, 6.15 mm width, 1.2 mm height.
Suitable for industrial, automotive, manufacturing, and power supply applications.
Explore more in the Electronics & Electricals category for semiconductor components and Schottky diode solutions, ensuring your projects leverage reliable and efficient power rectification devices.
Explore more products in our Schottky Diodes & Rectifiers category.
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