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Vishay 60 V 10 A Schottky Barrier Schottky Diode Surface Mount TO-252 Package V10PWM60HM3/I

Category Schottky Diode Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Model V10PWM60HM3/I
Mount Type Surface
Series eSMP
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 10A
Peak Reverse Repetitive Voltage Vrrm 60V
Diode Configuration Single
Rectifier Type Schottky
Peak Non-Repetitive Forward Surge Current Ifsm 200A
Maximum Forward Voltage Vf 0.62V

Key Features

  • Designed for high current density surface-mount applications with low profile of 1.3 mm height.
  • Utilizes Trench MOS Schottky technology for low forward voltage drop and high efficiency.
  • Suitable for automated PCB assembly with TO-252 DPAK package type.
  • Operates reliably from -65°C to 150°C, ensuring robust performance.
  • Supports high peak non-repetitive forward surge current of 200 A.
  • Meets RoHS compliance and automotive standard AEC-Q101 for quality assurance.
  • Ideal for DC/DC converters, freewheeling diodes, and polarity protection applications.
  • Comes as a single diode configuration in surface-mount format.

Product Description

Vishay V10PWM60HM3/I is a Schottky Barrier Schottky Diode designed for industrial and electronic applications requiring efficient power conversion and protection. Featuring a maximum continuous forward current of 10 A and a peak reverse voltage rating of 60 V, this component ensures reliable operation in demanding environments. The diode's surface-mount TO-252 (DPAK) package facilitates compact PCB layouts and automated assembly processes.

Utilizing advanced Trench MOS Schottky technology, the device achieves a low forward voltage drop of 0.62 V, minimizing power losses and improving overall system efficiency. Its low profile of approximately 1.3 mm height suits space-constrained installations.

Operating temperature range spans from -65°C to 150°C, enabling its use in varying industrial, automotive, and consumer electronics conditions. With a peak non-repetitive forward surge current capacity of 200 A, the diode can handle transient overloads effectively.

Qualification to stringent standards such as RoHS and automotive AEC-Q101 underlines the quality and reliability of the device for critical applications.

The Vishay V10PWM60HM3/I excels in DC/DC converter circuits, freewheeling diode roles, and polarity protection functions, making it a versatile choice for engineers in power management and electronic design.

Designed for high current density surface-mount with low profile. Trench MOS Schottky technology ensures low forward voltage and losses. TO-252 package supports automated PCB assembly. Wide operating temperature from -65°C to 150°C.

High surge current capability of 200 A. RoHS compliant and AEC-Q101 qualified automotive standard. Single diode configuration suitable for power electronics applications. Explore more semiconductor components and Schottky Diodes at EnvMart to enhance your electronic designs with high-quality Vishay products and equivalents.

Vishay 60 V 10 A Schottky Barrier Schottky Diode Surface Mount TO-252 Package V10PWM60HM3/I
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Frequently Asked Questions

The maximum continuous forward current for the Vishay V10PWM60HM3/I Schottky diode is 10 A.

This model has a peak reverse voltage rating of 60 V.

The operating temperature range for this diode spans from -65°C to 150°C.

The maximum forward voltage drop for this model is 0.62 V.

It comes in a TO-252 package type, which is suitable for surface mounting.

The diode can handle a peak non-repetitive forward surge current of 200 A.

Yes, the Vishay V10PWM60HM3/I meets RoHS compliance standards.

It is qualified under the automotive standard AEC-Q101.

This diode is ideal for applications such as DC/DC converters, freewheeling diodes, and polarity protection.

The Vishay V10PWM60HM3/I features a single diode configuration.

It utilizes Trench MOS Schottky technology, which provides low forward voltage drop and high efficiency.

The country of origin for this diode is India.

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