DiodesZetex N-Channel MOSFET, 250 mA, 60 V, Enhancement Mode, 3-Pin SOT-23 BS870-7-F

DiodesZetex BS870-7-F is a high-performance N-Channel MOSFET suitable for electronic and electrical semiconductor applications. It features a maximum continuous drain current of 250 mA and a maximum drain-source voltage of 60 V, designed with enhancement mode operation for effective switching performance.

This MOSFET is housed in a compact SOT-23 3-pin surface mount package, with dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height, making it ideal for space-constrained circuit boards.

The device operates reliably across a broad temperature spectrum from -55°C up to 150°C, allowing use in industrial and automotive environments. Its low on-resistance minimizes power loss, and the maximum power dissipation rating of 300 mW supports efficient energy management.

The MOSFET meets the automotive quality standard AEC-Q101, signifying suitability for automotive electronics and other critical applications. Maximum gate-source voltage of -20 V to +20 V ensures robust control and prevents gate damage.

Enhancement mode N-Channel MOSFET with 250 mA drain current capacity. Compact 3-pin SOT-23 package for surface mounting. Operating temperature from -55°C to 150°C for harsh applications. Low maximum drain-source resistance for improved efficiency.

Automotive standard AEC-Q101 certified for quality assurance. Maximum power dissipation of 300 mW. Forward voltage of 1.4 V enables fast switching. Dimensionally compact: 3 mm length, 1.4 mm width, 1.1 mm height.

This component is suitable for integration in industrial electronics, automotive systems, power management circuits, and other demanding applications requiring reliable discrete semiconductor components. The DiodesZetex BS870-7-F MOSFET is engineered to deliver high performance in a small form factor, enhancing device design flexibility.

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