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Vishay Single Type N-Channel MOSFET, HVMDIP-4 Package, 2.4 A Drain Current, 50 V Drain-Source Voltage, 1 W Power IRFD020PBF
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Vishay |
| Height | 0.330in |
| Length | 0.29in |
| Model | IRFD020PBF |
| Width | 0.425in |
| Maximum Operating Temperature | 150°C |
| Package Type | HVMDIP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS Directive 2002/95/EC |
| Pin Count | 4 |
| Number of Elements per Chip | 1 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 2.4A |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 0.1Ω |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.4V |
| Transistor Configuration | Single |
Key Features
- Compact HVMDIP-4 package for easy PCB mounting.
- Maximum continuous drain current of 2.4 amperes for moderate power applications.
- Drain-source voltage rated at 50 volts ensuring reliable switching.
- Low drain-source resistance of 0.1 ohm at Vgs=10 V for efficient conduction.
- Maximum power dissipation of 1 watt suitable for low to medium power circuits.
- Wide operating temperature range from -55°C to 150°C for industrial-grade reliability.
- Typical gate charge of 24 nanocoulombs contributing to fast switching speeds.
- Lead-free construction compliant with RoHS Directive 2002/95/EC.
Product Description
The Vishay IRFD020PBF is a single Type N-Channel MOSFET housed in a compact HVMDIP-4 package, optimized for efficient power switching with a maximum continuous drain current rating of 2.4 amperes and a drain-source voltage of 50 volts. This device supports a maximum power dissipation of 1 watt and a maximum gate-source voltage of 20 volts.
Designed to ensure low conduction losses, it features a low drain-source resistance of 0.1 ohm at a gate-source voltage of 10 volts, facilitating excellent efficiency in switching applications. The typical gate charge is 24 nanocoulombs at Vgs, enabling fast switching performance suitable for high-frequency circuits.
The robust temperature tolerance ranges from -55°C up to 150°C, making it suitable for a variety of demanding industrial and electronic environments. Its lead-free construction aligns with the RoHS Directive 2002/95/EC standards, promoting environmentally responsible manufacturing.
This MOSFET is ideal for use in battery chargers, inverters, switching power supplies (SMPS), and other power management applications requiring reliable and efficient switching components. Its compact size and end stackable design allow for ease of parallel connection and integration into automated production lines.
Compact HVMDIP-4 package conducive for PCB mounting. 2.4 A maximum continuous drain current ensures handling of moderate loads. Drain-source voltage rating of 50 V supports diverse power applications. Low Rds(on) of 0.1 Ω enhances conduction efficiency.
Maximum power dissipation of 1 W supports low to medium power circuits. Operates reliably across wide temperature range of -55°C to 150°C. Typical gate charge of 24 nC promotes rapid switching. RoHS-compliant lead-free construction.
Engineered for longitudinal life and temperature stability. Applications include battery chargers, inverters, and SMPS.
This Vishay MOSFET is manufactured in the Philippines, crafted for engineers and designers seeking a durable N-channel transistor solution for industrial and commercial electronics projects. Explore the range of Vishay semiconductor components for advanced power management solutions at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.4 amperes.
The drain-source voltage rating is 50 volts, making it suitable for various power applications.
This model is housed in a compact HVMDIP-4 package, which is designed for easy PCB mounting.
The maximum power dissipation for this device is 1 watt, which supports low to medium power circuits.
The typical gate charge is 24 nanocoulombs at a gate-source voltage of 10 volts, facilitating fast switching speeds.
This model operates reliably across a wide temperature range from -55°C to 150°C.
The maximum gate-source voltage is 20 volts.
The drain-source resistance is rated at 0.1 ohm at a gate-source voltage of 10 volts, ensuring efficient conduction.
This MOSFET has a pin count of 4.
It is compliant with the RoHS Directive 2002/95/EC, indicating lead-free construction.
This model is ideal for use in battery chargers, inverters, and switching power supplies (SMPS).
The Vishay IRFD020PBF is manufactured in the Philippines.
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