DiodesZetex N-Channel MOSFET, 1.6 A Drain Current, 100 V Drain Source Voltage, Enhancement Mode, 4-Pin SOT-23 DMN10H220L-7

DiodesZetex DMN10H220L-7 is a high-performance N-Channel MOSFET designed for efficient power management in electronic circuits. It features a maximum continuous drain current of 1.6 amperes and a robust 100-volt drain-source voltage rating, enabling its use in a variety of industrial, automotive, and commercial electronic applications.

This MOSFET is housed in a compact 4-pin SOT-23 surface mount package, providing efficient space utilization on printed circuit boards. The device operates in enhancement mode with a maximum gate-source voltage range of -16 to +16 volts, facilitating precise switching control with a low forward voltage drop of 0.7 volts.

Its maximum power dissipation of 1.3 watts ensures dependable thermal performance under typical operating conditions. The device operates over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments, especially in automotive applications compliant with AEC-Q200, AEC-Q100, and AEC-Q101 standards.

The DMN10H220L-7 features low drain-source resistance of 250 milliohms, minimizing conduction losses and enhancing efficiency in power circuits. Its compact size dimensions of length 3 mm, width 1.4 mm, and height 1 mm make it ideal for compact circuit designs.

Supports maximum continuous drain current of 1.6 amperes. Maximum drain-source voltage rating of 100 volts for enhanced switching performance. Surface mount package type SOT-23 with four pins. Low resistance of 250 milliohms between drain and source.

Operates in enhancement mode with a maximum gate-source voltage of -16 to +16 volts. Maximum power dissipation of 1.3 watts for reliable thermal management. Wide operating temperature range from -55°C to 150°C suitable for automotive and industrial applications.

Compact dimensions: 3 mm length, 1.4 mm width, and 1 mm height. Complies with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101 for quality assurance.

This MOSFET is commonly used in power management systems, automotive electronics, signal switching, and circuit protection. Its enhanced industrial design ensures dependable operation within demanding electrical specifications.

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