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DiodesZetex N-Channel MOSFET, 115 mA, 60 V, Enhancement Mode, 3-Pin SC-70 Package 2N7002W-7-F
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 2.2mm |
| Model | 2N7002W-7-F |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | 2N7002 |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 115mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 13.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 800mV |
Key Features
- Maximum continuous drain current of 115 mA for reliable current control.
- Drain-source voltage rating of 60 V suitable for low power circuits.
- Enhancement mode operation ensures efficient switching performance.
- Compact SC-70 3-pin surface mount package with 2.2 mm length and 1.35 mm width.
- Operates in temperature range from -55°C up to 150°C ensuring durability in harsh conditions.
- Maximum gate-source voltage rating of ±20 V for stable gate control.
- Low forward voltage of 800 mV minimizes power loss during conduction.
- Maximum power dissipation of 200 mW ideal for low power applications.
Product Description
The DiodesZetex 2N7002W-7-F is a high-quality N-channel MOSFET designed for low power amplification and switching tasks in electronic circuits. This device supports a maximum continuous drain current of 115 mA and a drain-source voltage of 60 V, making it suitable for compact and efficient electronic designs.
Packaged in a compact 3-pin SC-70 surface mount package measuring 2.2 mm in length, 1 mm in height, and 1.35 mm in width, this MOSFET is ideal for space-constrained applications. It operates efficiently in enhancement mode with a maximum gate-source voltage tolerance of ±20 V.
Its forward voltage is capped at 800 mV, reducing power dissipation and heat generation while maintaining performance. Rated for a maximum power dissipation of 200 mW, the transistor is suited for continuous operation within a temperature range from −55°C to 150°C.
Additionally, this MOSFET complies with stringent automotive standards AEC-Q200, AEC-Q100, and AEC-Q101, ensuring reliable performance in automotive and industrial environments. Maximum continuous drain current of 115 mA.
Drain-source voltage up to 60 V. Enhancement mode device for efficient switching. Compact SC-70 surface mount packaging. Wide operating temperature range from -55°C to 150°C. Maximum gate-source voltage of ±20 V. Forward voltage of 800 mV reduces power losses.
Power dissipation limited to 200 mW for stable operation. Automotive qualified with AEC-Q200, AEC-Q100, AEC-Q101 certifications.
This MOSFET is widely applicable in industrial, automotive, and consumer electronics for switching, amplification, and power management tasks. It supports integration in surface mount PCB assemblies, making it excellent for automated manufacturing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 115 mA.
It has a drain-source voltage rating of 60 V, making it suitable for low power circuits.
This MOSFET comes in a compact SC-70 surface mount package, measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
The operating temperature range for the 2N7002W-7-F is from -55°C to 150°C.
The maximum gate-source voltage rating is ±20 V, which allows for stable gate control.
The forward voltage is capped at 800 mV, which helps minimize power loss during conduction.
It has a maximum power dissipation of 200 mW, making it suitable for low power applications.
This model complies with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101, ensuring reliable performance in automotive applications.
It features an N-channel configuration, which is typical for enhancement mode devices.
The maximum drain-source resistance is 13.5 Ω, which is important for its switching performance.
This MOSFET has a total of 3 pins, suitable for surface mount applications.
It is widely applicable in industrial, automotive, and consumer electronics for switching, amplification, and power management tasks.
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