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DiodesZetex N-Channel MOSFET PowerDI3333 Package 5.3 A Continuous Drain Current 100 V Maximum Drain Source DMN10H120SFG-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 0.85mm
Length 3.35mm
Model DMN10H120SFG-13
Width 3.35mm
Mount Type Surface
Series DMN
Maximum Operating Temperature 150°C
Package Type PowerDI3333
Minimum Operating Temperature -55°C
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 5.3A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 122mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.4W
Typical Gate Charge Qg @ Vgs 10.6nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.78V

Key Features

  • Designed for surface mount applications with a PowerDI3333 package type.
  • Features an enhancement mode channel with low drain-source resistance of 122 mΩ.
  • Operates over a wide temperature range from -55°C to 150°C.
  • Maximum power dissipation of 2.4 W ensures durability in demanding applications.
  • Sturdy automotive standard compliance AEC-Q101 for reliability in automotive environments.
  • Typical gate charge of 10.6 nC at recommended gate-source voltage for efficient switching.
  • Gate-source voltage range of -20 V to +20 V for flexible control signal compatibility.

Product Description

DiodesZetex DMN10H120SFG-13 is an N-Channel MOSFET transistor designed for efficient switching and power management in industrial, automotive, and electronic manufacturing applications. It offers a maximum continuous drain current of 5.3 A and a maximum drain-source voltage of 100 V, enabling it to handle moderate power levels with high reliability.

The device is housed in a surface mount PowerDI3333 package with an 8-pin configuration, combining compact size with robust electrical performance. It features an enhancement-mode channel type with a superior low drain-source resistance of 122 milliohms, providing efficient conduction and reduced power loss.

Operating temperature ranges from -55°C to 150°C make it suitable for harsh environments, including automotive systems that require compliance with AEC-Q101 standards. The typical gate charge of 10.6 nC supports rapid switching capabilities, improving overall device responsiveness in power electronics.

Measuring just 3.35 mm in length and width with a height of 0.85 mm, this MOSFET fits efficiently into modern compact electronic designs. The gate-source voltage tolerance of -20 V to +20 V allows for flexible control methods, enhancing compatibility with diverse electronic circuits.

Surface mount PowerDI3333 package with 8 pins. 5.3 A maximum continuous drain current. 100 V maximum drain-source voltage. Low 122 mΩ drain-source resistance for efficient conduction. Maximum power dissipation 2.4 W. Operating temperature range from -55°C to 150°C.

Typical gate charge of 10.6 nC. AEC-Q101 automotive standard certified. Compact dimensions enable space-saving PCB layouts.

This MOSFET is ideal for applications in power management circuits, automotive electronics, industrial controls, and general-purpose switching. It supports enhanced efficiency and thermal performance in surface mount designs, making it a reliable choice for engineers and manufacturers.

Explore a wide range of semiconductor components, including MOSFETs like the DiodesZetex DMN10H120SFG-13, in the Electronics & Electricals category at EnvMart for your industrial and commercial electronic component needs.

DiodesZetex N-Channel MOSFET PowerDI3333 Package 5.3 A Continuous Drain Current 100 V Maximum Drain Source DMN10H120SFG-13
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Frequently Asked Questions

The maximum continuous drain current for the DMN10H120SFG-13 is 5.3 A.

This MOSFET can handle a maximum drain-source voltage of 100 V.

The drain-source resistance is 122 mΩ, which allows for efficient conduction.

The operating temperature range is from -55°C to 150°C.

The typical gate charge at the recommended gate-source voltage is 10.6 nC.

It is housed in a PowerDI3333 package type.

This MOSFET has 8 pins.

It complies with the AEC-Q101 automotive standard.

The dimensions are 3.35 mm in length and width, with a height of 0.85 mm.

The maximum power dissipation is 2.4 W.

The gate-source voltage range is from -20 V to +20 V.

It features an enhancement mode N-channel type.

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