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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.85mm |
| Length | 3.35mm |
| Model | DMN10H120SFG-13 |
| Width | 3.35mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.3A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 122mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.4W |
| Typical Gate Charge Qg @ Vgs | 10.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.78V |
DiodesZetex DMN10H120SFG-13 is an N-Channel MOSFET transistor designed for efficient switching and power management in industrial, automotive, and electronic manufacturing applications. It offers a maximum continuous drain current of 5.3 A and a maximum drain-source voltage of 100 V, enabling it to handle moderate power levels with high reliability.
The device is housed in a surface mount PowerDI3333 package with an 8-pin configuration, combining compact size with robust electrical performance. It features an enhancement-mode channel type with a superior low drain-source resistance of 122 milliohms, providing efficient conduction and reduced power loss.
Operating temperature ranges from -55°C to 150°C make it suitable for harsh environments, including automotive systems that require compliance with AEC-Q101 standards. The typical gate charge of 10.6 nC supports rapid switching capabilities, improving overall device responsiveness in power electronics.
Measuring just 3.35 mm in length and width with a height of 0.85 mm, this MOSFET fits efficiently into modern compact electronic designs. The gate-source voltage tolerance of -20 V to +20 V allows for flexible control methods, enhancing compatibility with diverse electronic circuits.
Surface mount PowerDI3333 package with 8 pins. 5.3 A maximum continuous drain current. 100 V maximum drain-source voltage. Low 122 mΩ drain-source resistance for efficient conduction. Maximum power dissipation 2.4 W. Operating temperature range from -55°C to 150°C.
Typical gate charge of 10.6 nC. AEC-Q101 automotive standard certified. Compact dimensions enable space-saving PCB layouts.
This MOSFET is ideal for applications in power management circuits, automotive electronics, industrial controls, and general-purpose switching. It supports enhanced efficiency and thermal performance in surface mount designs, making it a reliable choice for engineers and manufacturers.
Explore a wide range of semiconductor components, including MOSFETs like the DiodesZetex DMN10H120SFG-13, in the Electronics & Electricals category at EnvMart for your industrial and commercial electronic component needs.
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