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Vishay SiR N-Channel Power MOSFET 100 A 80 V Surface Mount 8-Pin PowerPAK SO-8 SiR584DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiR584DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiR |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 0.0039Ω |
| Maximum Power Dissipation Pd | 83.3W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Equipped with PowerPAK SO-8 package supporting surface mount applications.
- Maximum drain source resistance of 0.0039 ohms ensures efficient switching.
- Operates reliably in temperature range from -55°C to 150°C.
- Maximum gate source voltage rating of 20 V for high gate drive tolerance.
- Typical gate charge of 56 nC at Vgs supports fast switching performance.
- Maximum power dissipation of 83.3 W for high power handling capacity.
- RoHS compliant ensuring environmentally safe design.
Product Description
The Vishay SiR584DP-T1-RE3 is a high-performance N-Channel power MOSFET designed for demanding electronic and industrial applications requiring robust switching capabilities. Featuring a continuous drain current rating of 100 A and a maximum drain source voltage of 80 V, this MOSFET supports efficient power management in compact form factor.
Housed in the PowerPAK SO-8 surface mount package, it facilitates easy integration on printed circuit boards, particularly suited for synchronous rectification, primary side switch circuits, DC/DC converters, and motor drive switches. Its ultra-low drain source resistance of 0.0039 ohms minimizes conduction losses, improving overall circuit efficiency.
The device operates over a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial environments. Its maximum gate source voltage of 20 V and typical gate charge of 56 nC ensure reliable and rapid switching, crucial for high-frequency power conversion.
This MOSFET is engineered to handle a maximum power dissipation of 83.3 W, providing ample headroom for demanding loads. Its compact size of 6.15 mm length and 5.15 mm width supports dense circuit designs where space is limited.
PowerPAK SO-8 surface mount package enhances mounting efficiency. Low Rds(on) value contributes to energy-efficient operation. Wide operating temperature enables use in industrial and commercial systems. High current rating suitable for power electronics and motor control.
Compliance with RoHS standards ensures sustainable manufacturing.
This MOSFET is ideal for use in industrial electronics, laboratory power supplies, HVAC inverters, manufacturing machinery power stages, and commercial electronics requiring high reliability and efficiency. Optimized for synchronous rectification applications, it enables reduction of power losses and thermal footprints.
Explore a wide selection of discrete semiconductors including MOSFETs on EnvMart to fulfill your industrial and laboratory needs with trusted brand Vishay components.
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Frequently Asked Questions
The Vishay SiR584DP-T1-RE3 has a maximum continuous drain current rating of 100 A.
This MOSFET can handle a maximum drain source voltage of 80 V.
It is housed in a PowerPAK SO-8 surface mount package.
The maximum power dissipation for this model is 83.3 W.
The typical gate charge at Vgs is 56 nC.
The maximum gate source voltage rating for this model is 20 V.
This MOSFET measures 6.15 mm in length and 5.15 mm in width.
It operates reliably within a temperature range from -55°C to 150°C.
The maximum drain source resistance is 0.0039 ohms.
Yes, it is RoHS compliant, ensuring environmentally safe design.
It is suitable for applications such as synchronous rectification, DC/DC converters, and motor drive switches.
This model features an 8-pin configuration.
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