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IXYS N-Channel XPTTM IGBT 25 A 2500 V 3-Pin TO-247HV Through Hole IXYH25N250CHV

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IXYS N-Channel XPTTM IGBT 25 A 2500 V 3-Pin TO-247HV Through Hole IXYH25N250CHV

Name: IXYS N-Channel XPTTM IGBT 25 A 2500 V 3-Pin TO-247HV Through Hole IXYH25N250CHV
Brand: IXYS
SKU: 213606
Price: 37.64 USD
Availability: InStock

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Category IGBT Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	39.4mm
Model	IXYH25N250CHV
Width	15.8mm
Mount Type	Through Hole
Series	XPT
Maximum Operating Temperature	175°C
Package Type	TO-247HV
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Continuous Collector Current Ic	25A
Maximum Collector Emitter Voltage Vceo	2500V
Maximum Collector Emitter Saturation Voltage VceSAT	4V
Channel Type	N
Maximum Power Dissipation Pd	937W
Maximum Gate Emitter Voltage VGEO	±20 V

Key Features

Offers maximum continuous collector current of 25 A for efficient power handling.
Maximum collector emitter voltage rating of 2500 V ensures suitability for high voltage circuits.
Equipped with a 3-pin TO-247HV package suitable for through-hole mounting.
Features thin wafer XPT™ technology for low on-state voltages and improved efficiency.
Includes co-packed fast recovery diodes and positive temperature coefficient characteristics.
Designed to operate in a temperature range from -55°C to 175°C for robust performance.
Maximum power dissipation of 937 W supports heavy-duty power applications.
Switching speed of 246 ns suitable for fast switching power supplies.

Product Description

IXYS IXYH25N250CHV is a high-performance N-Channel XPTTM IGBT transistor designed for industrial electronic circuits requiring high voltage and current capabilities. Housed in a TO-247HV 3-pin package with through-hole mount, it offers a maximum continuous collector current of 25 A and collector emitter voltage up to 2500 V, making it suitable for power semiconductor applications.

The device incorporates thin wafer XPT™ technology which provides low on-state voltage (VCE(sat)) and enhances efficiency, supported by co-packed fast recovery diodes and a positive temperature coefficient of VCE(sat) which improves thermal stability and reliability in power systems.

Rated for operation over a wide temperature range from -55°C to 175°C, the IGBT is versatile for demanding environments. It delivers a maximum power dissipation of 937 W and a switching speed of 246 ns, making it fit for high-speed switching tasks in pulser circuits, laser and X-ray generators, and other high-voltage test equipment.

The maximum gate emitter voltage rating of ±20 V protects the gate structure against voltage spikes, ensuring long device life. The package dimensions include a height of 39.4 mm and width of 15.8 mm, conforming to international standards and RoHS compliance.

Maximum continuous collector current of 25 A. Collector emitter voltage rating of 2500 V. Maximum power dissipation of 937 W. Thin wafer XPT™ technology for enhanced efficiency. Co-packed fast recovery diodes. Operational temperature range: -55°C to 175°C.

Switching speed of 246 ns. Maximum gate emitter voltage ±20 V. 3-pin TO-247HV package with through-hole mount.

This IGBT transistor is widely used in high voltage power supplies, capacitor discharge circuits, AC switches, and other industrial electronics applications requiring robust and reliable power switching components.

Explore more IGBT transistors and semiconductor components in the Electronics & Electricals category at EnvMart for industrial, manufacturing, laboratory, and commercial usage.