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Infineon N-Channel IGBT 75 A 650 V 3-Pin TO-247 Through Hole IKW75N65EL5XKSA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 5.21mm
Length 16.13mm
Model IKW75N65EL5XKSA1
Width 21.1mm
Mount Type Through Hole
Series TrenchStop
Energy Rating 7.22mJ
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 75A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V
Channel Type N
Maximum Power Dissipation Pd 536W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • Supports a maximum continuous collector current of 75 A.
  • Rated for a maximum collector-emitter voltage of 650 V.
  • Features a low collector-emitter saturation voltage of 1.35 V for efficient conduction.
  • Maximum power dissipation capability of 536 W enables high thermal loads.
  • Comes in a TO-247 through-hole package with 3 pins for secure mounting.
  • Gate-emitter voltage rated up to 20 V ensuring robust gate drive margins.
  • Wide operating temperature range from -40 °C up to 175 °C.
  • Energy rating of 7.22 mJ supports high-energy switching operations.

Product Description

The Infineon IKW75N65EL5XKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding industrial power switching and conversion applications. It supports a continuous collector current of up to 75 A and withstands collector-emitter voltages up to 650 V. This device operates efficiently with a low saturation voltage of 1.35 V, minimizing conduction losses during switching cycles.

Housed in a robust TO-247 through-hole package with 3 pins, it facilitates easy mounting on standard heatsinks using conventional methods for effective thermal management. It supports a maximum power dissipation of 536 W, allowing operation under elevated thermal loads without compromising reliability.

The transistor's gate-emitter voltage rating of 20 V provides ample margin for safe and reliable gate drive, helping to prevent gate-oxide stress. Its extended operating temperature range from -40 °C to 175 °C enables usage in harsh environmental conditions, making it suitable for industrial motor-drive inverters, high-power converters, uninterruptible power supplies (UPS), induction heating, welding power stages, and renewable energy inverter sections.

While the device complies with RoHS requirements ensuring environmental compliance, it is not classified as meeting automotive standards and should be assessed accordingly for vehicle-related applications.

Supports high voltage blocking with 650 V maximum collector-emitter voltage. Handles continuous collector current of up to 75 A for demanding load conditions. Low conduction losses due to 1.35 V collector-emitter saturation voltage.

536 W power dissipation rating for elevated thermal capability. TO-247 through-hole package allows straightforward heatsink attachment. 20 V maximum gate-emitter voltage for robust gate driver compatibility. Wide operating temperature range from -40 °C to 175 °C for harsh environments.

Energy rating of 7.22 mJ for reliable high-energy switching performance. Complies with RoHS but not qualified as automotive standard.

This IGBT is ideal for industrial power electronics applications where reliable, efficient switching is critical. Suitable sectors include manufacturing, industrial motor control, power supplies, UPS systems, induction heating, welding equipment, and renewable energy systems, offering extended performance and durability under elevated electrical and thermal stresses.

Explore more IGBTs and related components for industrial power electronics at EnvMart.

Infineon N-Channel IGBT 75 A 650 V 3-Pin TO-247 Through Hole IKW75N65EL5XKSA1
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