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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.21mm |
| Length | 16.13mm |
| Model | IKW75N65EL5XKSA1 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 7.22mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 75A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 536W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
The Infineon IKW75N65EL5XKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding industrial power switching and conversion applications. It supports a continuous collector current of up to 75 A and withstands collector-emitter voltages up to 650 V. This device operates efficiently with a low saturation voltage of 1.35 V, minimizing conduction losses during switching cycles.
Housed in a robust TO-247 through-hole package with 3 pins, it facilitates easy mounting on standard heatsinks using conventional methods for effective thermal management. It supports a maximum power dissipation of 536 W, allowing operation under elevated thermal loads without compromising reliability.
The transistor's gate-emitter voltage rating of 20 V provides ample margin for safe and reliable gate drive, helping to prevent gate-oxide stress. Its extended operating temperature range from -40 °C to 175 °C enables usage in harsh environmental conditions, making it suitable for industrial motor-drive inverters, high-power converters, uninterruptible power supplies (UPS), induction heating, welding power stages, and renewable energy inverter sections.
While the device complies with RoHS requirements ensuring environmental compliance, it is not classified as meeting automotive standards and should be assessed accordingly for vehicle-related applications.
Supports high voltage blocking with 650 V maximum collector-emitter voltage. Handles continuous collector current of up to 75 A for demanding load conditions. Low conduction losses due to 1.35 V collector-emitter saturation voltage.
536 W power dissipation rating for elevated thermal capability. TO-247 through-hole package allows straightforward heatsink attachment. 20 V maximum gate-emitter voltage for robust gate driver compatibility. Wide operating temperature range from -40 °C to 175 °C for harsh environments.
Energy rating of 7.22 mJ for reliable high-energy switching performance. Complies with RoHS but not qualified as automotive standard.
This IGBT is ideal for industrial power electronics applications where reliable, efficient switching is critical. Suitable sectors include manufacturing, industrial motor control, power supplies, UPS systems, induction heating, welding equipment, and renewable energy systems, offering extended performance and durability under elevated electrical and thermal stresses.
Explore more IGBTs and related components for industrial power electronics at EnvMart.
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