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Infineon N-Channel IGBT Insulated Gate Bipolar Transistor 74A 650V 3-Pin TO-247 Through Hole IGW40N65F5FKSA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IGW40N65F5FKSA1
Mount Type Through Hole
Series TrenchStop
Energy Rating 0.46mJ
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals JEDEC, RoHS, Pb-free lead plating
Pin Count 3
Maximum Continuous Collector Current Ic 74A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
Channel Type N
Maximum Power Dissipation Pd 250W
Maximum Gate Emitter Voltage VGEO ±30 V

Key Features

  • Maximum continuous collector current of 74 amperes ensures high load capacity.
  • Collector-emitter voltage rating of 650 volts suitable for medium power applications.
  • Equipped with TrenchStop technology for low saturation voltage and fast switching.
  • Packaged in a durable 3-pin TO-247 through-hole mount for easy integration.
  • Wide operating temperature range from -40°C up to 175°C.
  • Compliant with JEDEC, RoHS standards with lead-free plating for environmental safety.
  • Features low turn-off losses and minimal electromagnetic interference.
  • Energy rating of 0.46 millijoules suitable for reliable switching operations.

Product Description

Infineon IGW40N65F5FKSA1 is a power semiconductor Insulated Gate Bipolar Transistor (IGBT) featuring a 3-pin TO-247 through-hole packaging and N-Channel configuration. It combines high-efficiency switching properties and low saturation voltage, making it ideal for industrial, automotive, and manufacturing power applications requiring robust and reliable performance.

This device supports a maximum continuous collector current of 74 amperes and a maximum collector-emitter voltage of 650 volts. The TrenchStop technology integrated within the transistor ensures reduced conduction losses, fast recovery times, and short tail currents leading to low electromagnetic interference.

Designed to function effectively within an operating temperature range of -40°C to 175°C, the IGW40N65F5FKSA1 promises durability in harsh environments. The unit includes a high-speed, fast recovery anti-parallel diode and meets industry standards such as JEDEC and RoHS with Pb-free lead plating.

The transistor’s compact TO-247 package allows for straightforward through-hole mounting, facilitating easy assembly into power electronics circuits in sectors including industrial drives, renewable energy systems, and motor control units.

Maximum continuous collector current of 74 amperes ensures high load capacity. Collector-emitter voltage rating of 650 volts suitable for medium power applications. TrenchStop technology for low conduction losses and fast switching.

3-pin TO-247 through-hole packaging for reliable mounting. Wide operating temperature range from -40°C to 175°C for robust performance. Compliant with JEDEC and RoHS standards with Pb-free plating. Low turn-off losses and minimal electromagnetic interference enhance performance.

Energy rating of 0.46 millijoules supports durable switching operations.

This Infineon IGBT transistor is ideal for industrial electronic systems, manufacturing equipment, power converters, and HVAC control modules where efficient switching and high current capacity are critical. For more components and semiconductors, explore the Electronics & Electricals category at EnvMart.

Infineon N-Channel IGBT Insulated Gate Bipolar Transistor 74A 650V 3-Pin TO-247 Through Hole IGW40N65F5FKSA1
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