World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

Shopping Cart $0.00

ROHM N-Channel IGBT Power Transistor 80 A 650 V 3-Pin TO-247N Through Hole RGW80TS65DHRC11

Free Delivery in India | Lowest Global Shipping Charges

ROHM N-Channel IGBT Power Transistor 80 A 650 V 3-Pin TO-247N Through Hole RGW80TS65DHRC11

Name: ROHM N-Channel IGBT Power Transistor 80 A 650 V 3-Pin TO-247N Through Hole RGW80TS65DHRC11
Brand: ROHM
SKU: 173667
Price: 6.24 USD
Availability: InStock



Category IGBT Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Model	RGW80TS65DHRC11
Mount Type	Through Hole
Package Type	TO-247N
Pin Count	3
Maximum Continuous Collector Current Ic	80A
Maximum Collector Emitter Voltage Vceo	650V
Channel Type	N
Maximum Power Dissipation Pd	214W
Maximum Gate Emitter Voltage VGEO	±30 V

Key Features

Capable of high power dissipation up to 214 W for industrial applications.
Features low collector emitter saturation voltage for enhanced efficiency.
Designed with high-speed switching to reduce switching loss.
Equipped with a ±30 V maximum gate emitter voltage for reliable gate control.
Constructed with Pb-free lead plating ensuring RoHS compliance.
Suitable for automotive, DC-DC converters, PFC circuits, and industrial inverters.
Comes in a robust TO-247N package with easy through hole mounting.
Three-pin configuration for effective integration in electronic circuits.

Product Description

ROHM RGW80TS65DHRC11 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power switching and high reliability. With a maximum continuous collector current of 80 A and a collector emitter voltage rating of 650 V, this device is ideal for power conversion and control in industrial, automotive, and consumer electronics sectors.

The transistor features a robust 3-pin TO-247N package which supports through hole mounting, providing excellent thermal performance and ease of PCB integration. It supports a maximum power dissipation of 214 W, allowing operation under demanding load conditions.

This IGBT exhibits low collector emitter saturation voltage and reduced switching losses, enhancing overall system efficiency and thermal management. Its ±30 V maximum gate emitter voltage ensures robust gate drive capability and reduces risk of device damage.

Manufactured with Pb-free lead plating, the RGW80TS65DHRC11 complies with current RoHS standards, promoting environmentally safe electronics manufacturing.

Typical applications include automotive electronics, on and off-board computers, DC-DC converters, power factor correction circuits, and industrial inverters. This device is designed to meet stringent automotive standards though not certified to AEC-Q101.

High continuous collector current of 80 A supports high power applications. Maximum collector emitter voltage of 650 V enables enduring high voltage operation. TO-247N package ensures thermal efficiency and ruggedness. Low switching loss supports energy efficient designs.

Pb-free lead plating and RoHS compliance ensure environmental safety. Suitable for industrial, automotive, and power electronics use cases. Through hole mounting facilitates easy assembly in various PCB designs. Reliable gate control with ±30 V maximum gate emitter voltage.

Explore the full range of semiconductor components including IGBTs at EnvMart for diverse industrial and manufacturing needs.