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Toshiba N-Channel Discrete IGBT 50 A 600 V 3-Pin TO-3P Through Hole GT50JR22
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Model | GT50JR22 |
| Mount Type | Through Hole |
| Series | 6.5th generation |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-3P |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 230W |
| Maximum Gate Emitter Voltage VGEO | ±25 V |
Key Features
- Features a 3-pin TO-3P package for through hole mounting.
- Maximum power dissipation of 230 watts ensures durability under heavy loads.
- Supports a switching speed of up to 1 MHz for rapid operation.
- Operates safely within a temperature range of -55°C to 175°C.
- Maximum gate emitter voltage rating of ±25 V enhances device reliability.
- RoHS compliant ensuring environmental standards adherence.
- Designed as a discrete insulated gate bipolar transistor combining MOSFET gate control with bipolar transistor current capacity.
- Ideal for power applications requiring high current and voltage handling.
Product Description
Toshiba GT50JR22 is a discrete N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency power switching applications. It features a maximum continuous collector current of 50 A and a collector emitter voltage of 600 V, housed in a 3-pin TO-3P package suitable for through hole mounting. This device supports switching speeds up to 1 MHz and offers power dissipation up to 230 watts.
The IGBT combines the simple gate drive characteristics of MOSFETs with the high-current capacity and low saturation voltage of bipolar transistors, making it suitable for industrial, power electronics, and motor control applications. Its operating temperature range from -55°C to 175°C ensures reliable performance in harsh environments.
The device has a maximum gate emitter voltage of ±25 V, providing robustness against voltage spikes. Compliant with RoHS standards, it supports environmentally friendly manufacturing and disposal practices.
This 6.5th generation Toshiba IGBT is notable for fast switching, high efficiency, and ease of integration into power modules. Its three-pin configuration and through hole mount type facilitate straightforward PCB installation for power circuit designs.
3-pin TO-3P package for stable mounting and heat dissipation. 50 A collector current rating suitable for medium power applications. 600 V collector emitter voltage rating for broad voltage range usage. High power dissipation of 230 W for sustaining heavy loads.
Wide operating temperature range from -55°C to 175°C. Fast switching speed of 1 MHz for efficient power electronic controls. RoHS compliant ensuring safety and environmental standards. Combines MOSFET and bipolar transistor benefits for optimal switching.
Designed for use in industrial, power electronics, HVAC, and manufacturing applications. Explore more power semiconductor components and discrete IGBTs in the Electronics & Electricals category on EnvMart for your industrial and electronic project needs.
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Frequently Asked Questions
The maximum continuous collector current for this model is 50 A.
It has a maximum collector emitter voltage rating of 600 V.
This IGBT can handle a maximum power dissipation of 230 watts.
The GT50JR22 supports a switching speed of up to 1 MHz.
It operates safely within a temperature range of -55°C to 175°C.
This model uses a 3-pin TO-3P package suitable for through hole mounting.
The maximum gate emitter voltage rating is ±25 V.
Yes, it is RoHS compliant, ensuring adherence to environmental standards.
This IGBT is designed for industrial, power electronics, HVAC, and manufacturing applications.
It features a 3-pin configuration.
It belongs to the 6.5th generation series of IGBTs.
It combines the gate drive characteristics of MOSFETs with the current capacity of bipolar transistors, making it efficient for power applications.
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