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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IGW50N65H5FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 0.7mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS, JEDEC |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 305W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Infineon IGW50N65H5FKSA1 is a high-performance N-Channel insulated-gate bipolar transistor (IGBT) designed for power conversion and control in industrial and commercial electronic applications. This component delivers a maximum continuous collector current of 80 A and withstands voltage up to 650 V, making it suitable for high-power and high-voltage switching operations.
Enclosed in a robust TO-247 through-hole package with three pins, the device supports effective thermal dissipation, enabling power dissipation up to 305 W. Its low saturation voltage of 2.1 V assists in minimizing conduction losses, enhancing overall efficiency. The gate-emitter voltage rating of ±20 V provides flexibility in gate drive design.
The transistor operates reliably within a wide temperature range from -40°C up to 175°C, accommodating harsh thermal environments typical in industrial settings. It meets industry standards including RoHS for environmental compliance and JEDEC for packaging, ensuring it adheres to common quality norms.
Maximum continuous collector current of 80 A supports substantial load handling capacity. Collector-emitter voltage rating of 650 V suitable for high-voltage switching. Power dissipation up to 305 W allows for heavy-duty operation.
Low saturation voltage reduces power losses for efficiency. ±20 V gate-emitter voltage rating ensures safe gate drive control. Wide operating temperature range from -40°C to 175°C for harsh environments. TO-247 through-hole package designed for secure mounting and effective heat management.
RoHS and JEDEC standards compliant for environmental and quality assurance. Energy rating of 0.7 mJ provides protection against avalanche energy stresses. Ideal for motor-drive inverters, power supplies, welding control, induction heating, power-factor correction, and renewable energy inverters.
This transistor is widely used in industrial motor-drive inverter stages, high-voltage power supplies and converters, switch-mode power applications in traction electronics, industrial welding, induction heating controllers, and renewable energy applications. Its robust specifications make it a reliable choice for high-demand electronics requiring efficient power switching and control.
Explore our Electronics & Electricals catalog for more Infineon IGBTs and related power semiconductor solutions available at EnvMart for your industrial and manufacturing needs.
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