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Infineon N-Channel IGBT 80 A 650 V 3-Pin TO-247 Through Hole IGW50N65H5FKSA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IGW50N65H5FKSA1
Mount Type Through Hole
Series TrenchStop
Energy Rating 0.7mJ
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals RoHS, JEDEC
Pin Count 3
Maximum Continuous Collector Current Ic 80A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
Channel Type N
Maximum Power Dissipation Pd 305W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • Maximum continuous collector current of 80 A supports substantial load handling capacity.
  • Collector-emitter voltage of 650 V is suitable for high-voltage switching tasks.
  • Power dissipation capacity of 305 W enables effective thermal management in demanding uses.
  • Low collector-emitter saturation voltage of 2.1 V reduces conduction power losses.
  • Gate-emitter voltage tolerance of ±20 V ensures flexible gate drive operation.
  • Operating temperature range from -40°C to 175°C suits harsh industrial environments.
  • TO-247 package with through-hole mount facilitates robust mounting and heat dissipation.
  • Compliant with RoHS and JEDEC standards for environmental safety and packaging.

Product Description

Infineon IGW50N65H5FKSA1 is a high-performance N-Channel insulated-gate bipolar transistor (IGBT) designed for power conversion and control in industrial and commercial electronic applications. This component delivers a maximum continuous collector current of 80 A and withstands voltage up to 650 V, making it suitable for high-power and high-voltage switching operations.

Enclosed in a robust TO-247 through-hole package with three pins, the device supports effective thermal dissipation, enabling power dissipation up to 305 W. Its low saturation voltage of 2.1 V assists in minimizing conduction losses, enhancing overall efficiency. The gate-emitter voltage rating of ±20 V provides flexibility in gate drive design.

The transistor operates reliably within a wide temperature range from -40°C up to 175°C, accommodating harsh thermal environments typical in industrial settings. It meets industry standards including RoHS for environmental compliance and JEDEC for packaging, ensuring it adheres to common quality norms.

Maximum continuous collector current of 80 A supports substantial load handling capacity. Collector-emitter voltage rating of 650 V suitable for high-voltage switching. Power dissipation up to 305 W allows for heavy-duty operation.

Low saturation voltage reduces power losses for efficiency. ±20 V gate-emitter voltage rating ensures safe gate drive control. Wide operating temperature range from -40°C to 175°C for harsh environments. TO-247 through-hole package designed for secure mounting and effective heat management.

RoHS and JEDEC standards compliant for environmental and quality assurance. Energy rating of 0.7 mJ provides protection against avalanche energy stresses. Ideal for motor-drive inverters, power supplies, welding control, induction heating, power-factor correction, and renewable energy inverters.

This transistor is widely used in industrial motor-drive inverter stages, high-voltage power supplies and converters, switch-mode power applications in traction electronics, industrial welding, induction heating controllers, and renewable energy applications. Its robust specifications make it a reliable choice for high-demand electronics requiring efficient power switching and control.

Explore our Electronics & Electricals catalog for more Infineon IGBTs and related power semiconductor solutions available at EnvMart for your industrial and manufacturing needs.

Infineon N-Channel IGBT 80 A 650 V 3-Pin TO-247 Through Hole IGW50N65H5FKSA1
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is 80 A, which supports substantial load handling capacity.

The collector-emitter voltage rating is 650 V, making it suitable for high-voltage switching tasks.

It has a power dissipation capacity of 305 W, enabling effective thermal management in demanding applications.

The low collector-emitter saturation voltage is 2.1 V, which helps reduce conduction power losses.

The gate-emitter voltage tolerance is ±20 V, providing flexibility in gate drive operation.

This model operates reliably within a temperature range from -40°C to 175°C, suitable for harsh industrial environments.

It features a TO-247 package with through-hole mounting, facilitating robust mounting and effective heat dissipation.

It is compliant with RoHS and JEDEC standards for environmental safety and packaging.

The energy rating is 0.7 mJ, providing protection against avalanche energy stresses.

It is widely used in industrial motor-drive inverters, high-voltage power supplies, and renewable energy applications.

This IGBT has a pin count of 3, which is standard for the TO-247 package.

This model belongs to the TrenchStop series, known for its efficiency in power conversion and control.

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