onsemi IGBT 650 V, 75 A, 3-Pin TO-247-4LD Surface Mount Semiconductor FGHL75T65LQDTL4

onsemi FGHL75T65LQDTL4 IGBT is a 650 V, 75 A insulated-gate bipolar transistor designed for high-performance power conversion. Featuring a 3-pin TO-247-4LD surface mount package, this device balances low conduction losses and controllable turn-off voltage overshoot, enabling efficient switching operation.

The robust voltage rating of 650 V and power dissipation capacity of 469 W make it suitable for industrial applications such as solar inverters, uninterruptible power supplies (UPS), electric vehicle (EV) charging stations, and energy storage systems (ESS). The transistor operates reliably over a wide temperature range from -55°C to 175°C, ensuring durability in demanding environments.

The device incorporates a positive temperature coefficient to facilitate easy paralleling operation, reducing complexity in multi-device configurations. Maximum gate-emitter voltage is rated at 20 V for precise switching control. The compact dimensions - length 15.87 mm, width 20.82 mm, and height 4.82 mm - allow for flexible PCB integration.

Its RoHS compliance guarantees environmentally safe manufacturing and disposal. This IGBT is ideal for enhancing the efficiency and reliability of power electronic systems in industrial, renewable energy, and transportation sectors.

Maximum collector-emitter voltage of 650 V ensures reliable high-voltage operation. Capable of dissipating up to 469 W of power for efficient heat management. Surface mount package type TO-247-4LD with 3-pin configuration for easy PCB integration.

Wide operating temperature from -55°C to 175°C suitable for heavy-duty use. Positive temperature coefficient for ease of paralleling operation. Designed specifically for solar inverter, UPS, EV charging stations, and ESS applications.

RoHS compliant for environmental safety and regulatory compliance. Explore more on onsemi components and semiconductor products at EnvMart for industrial and electronic applications.