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Infineon N-Channel IGBT Transistor 75 A 600 V 3-Pin TO-247 Through Hole IGW75N60H3FKSA1

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Infineon N-Channel IGBT Transistor 75 A 600 V 3-Pin TO-247 Through Hole IGW75N60H3FKSA1

Name: Infineon N-Channel IGBT Transistor 75 A 600 V 3-Pin TO-247 Through Hole IGW75N60H3FKSA1
Brand: Infineon
SKU: 184395
Price: 5.95 USD
Availability: InStock

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Category IGBT Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	40.6mm
Model	IGW75N60H3FKSA1
Width	15.7mm
Mount Type	Through Hole
Energy Rating	6.2mJ
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-40°C
Standards/Approvals	JEDEC, RoHS
Pin Count	3
Maximum Continuous Collector Current Ic	75A
Maximum Collector Emitter Voltage Vceo	600V
Maximum Collector Emitter Saturation Voltage VceSAT	2.3V
Channel Type	N
Maximum Power Dissipation Pd	428W
Maximum Gate Emitter Voltage VGEO	±20 V

Key Features

Maximum continuous collector current of 75 amperes ensures high current handling capability.
Collector-emitter voltage rating of 600 volts supports high-voltage switching applications.
Maximum power dissipation of 428 watts allows effective thermal management.
Robust TO-247 package with 3-pin configuration for easy through-hole mounting.
Wide operating temperature range from -40°C to 175°C for industrial environments.
Low saturation voltage (VceSAT) of 2.3 volts reduces conduction losses.
High maximum gate-emitter voltage tolerance of ±20 volts offers reliable operation.
Compliant with JEDEC and RoHS standards ensuring quality and environmental safety.

Product Description

Infineon IGW75N60H3FKSA1 is a N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching in power electronics applications. It features a continuous collector current rating of 75 amperes and a maximum collector-emitter voltage of 600 volts. Packaged in a 3-pin TO-247 through-hole form factor, this device is suitable for robust industrial mounting and thermal management.

The transistor utilizes Infineon's TrenchStop technology, which offers very low saturation voltage and reduced turn-off losses, enhancing overall circuit efficiency. Its maximum power dissipation rating of 428 W supports demanding power applications, while the operating temperature range from -40°C to 175°C makes it ideal for harsh environments.

This IGBT transistor provides a maximum gate-emitter voltage of ±20 V and low EMI emissions, supporting stable and reliable operation in switching power electronics such as motor drives, inverters, and power supplies. The device complies with JEDEC and RoHS standards, guaranteeing quality and environmental compliance.

Maximum continuous collector current of 75A. Collector-emitter voltage rating of 600V. Maximum power dissipation of 428 W. TO-247 3-pin through-hole package. Operating temperature from -40°C to 175°C. Low collector-emitter saturation voltage of 2.3V.

Gate-emitter voltage tolerance of ±20V. TrenchStop technology for reduced switching losses. Complies with JEDEC and RoHS standards. Ideal for industrial power and motor control applications.

This power semiconductor is engineered for industrial, manufacturing, automotive electronics, and HVAC equipment where high current and voltage switching with efficiency and reliability is crucial.

Explore our full range of IGBT transistors and enhance your power electronics systems for improved performance and longevity.